参数资料
型号: M366S1623DT0-C1H
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: PC100 Unbuffered DIMM
中文描述: PC100的无缓冲DIMM
文件页数: 7/9页
文件大小: 136K
代理商: M366S1623DT0-C1H
M366S1623DT0
PC100 Unbuffered DIMM
Rev. 0.0 Jun. 1999
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
Symbol
-80
-1H
-1L
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
8
1000
10
1000
10
1000
ns
1
CAS latency=2
-
10
12
CLK to valid
output delay
CAS latency=3
t
SAC
6
6
6
ns
1,2
CAS latency=2
-
6
7
Output data
hold time
CAS latency=3
t
OH
3
3
3
ns
2
CAS latency=2
-
3
3
CLK high pulse width
t
CH
3
3
3
ns
3
CLK low pulse width
t
CL
3
3
3
ns
3
Input setup time
t
SS
2
2
2
ns
3
Input hold time
t
SH
1
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
6
6
6
ns
CAS latency=2
-
6
7
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
相关PDF资料
PDF描述
M366S1623DT0-C1L PC100 Unbuffered DIMM
M366S1623DT0-C80 PC100 Unbuffered DIMM
M366S1623ET0 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
M366S2953BTS-C7A SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
M366S3354BTS CAP 68UF 16V ELECT KZE RAD
相关代理商/技术参数
参数描述
M366S1623DT0-C1L 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM
M366S1623DT0-C1L00 制造商:Samsung SDI 功能描述:16M X 64 SDRAM DIMM based on 8M X 8, 4banks, 4K refresh, 3.3V synchronous drams with spd
M366S1623DT0-C75 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133 Unbuffered DIMM
M366S1623DT0-C7A 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133 Unbuffered DIMM
M366S1623DT0-C80 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM