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参数资料
| 型号： | M366S1623ET0 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 16Mx64 SDRAM的内存在8Mx8，4Banks，4K的刷新，3.3社民党基于同步DRAM |
| 文件页数： | 5/12页 |
| 文件大小： | 126K |
| 代理商： | M366S1623ET0 |
PC133 Unbuffered DIMM
M366S1623ET0
REV. 0.0 Dec, 2000
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
16
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
= 1.4V
±
200
mV)
Pin
Symbol
Min
Max
Unit
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
C
ADD
C
IN
C
CKE
C
CLK
C
CS
C
DQM
C
OUT
70
70
45
35
25
15
10
95
95
55
40
30
20
15
pF
pF
pF
pF
pF
pF
pF
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
Input logic high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note :
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相关代理商/技术参数 |
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|---|---|
| M366S1654CTS | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S1654CTS-C1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S1654CTS-C1L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S1654CTS-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S1654CTS-C7C | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
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