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参数资料
| 型号： | M366S3253BTS |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 32Mx64 SDRAM的内存在32Mx8，4Banks，8K的刷新，3.3社民党基于同步DRAM |
| 文件页数： | 6/10页 |
| 文件大小： | 115K |
| 代理商： | M366S3253BTS |
PC133 Unbuffered DIMM
M366S3253BTS
REV. 0.1 July. 2000
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
tCC=7.5ns
tCC=10ns
Operating current
(One bank active)
I
CC1
Burst length =1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
960
880
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
16
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
16
Precharge standby current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
128
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
112
Active standby current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
48
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
48
Active standby current
in non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
240
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
200
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
1,120
920
mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
1,760
1,680
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
24
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M366S3253BTS-C75 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS-C1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS-C1L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
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