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参数资料
| 型号： | M41000001Y |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | 32兆位（4个M × 8位/ 2米x 16位），3.0伏的CMOS只，同时作业闪存和4兆位（512亩x 8-Bit/256亩x 16位），静态存储器 |
| 文件页数： | 48/65页 |
| 文件大小： | 582K |
| 代理商： | M41000001Y |
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November 12, 2001
Am41DL32x4G
47
P R E L I M I N A R Y
AC CHARACTERISTICS
Flash Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the
“
Flash Erase And Programming Performance
”
section for more information.
Parameter
Speed Options
Unit
JEDEC
Std
Description
70
85
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
85
ns
t
AVWL
t
AS
Address Setup Time (WE# to Address)
Min
0
ns
t
ASO
Address Setup Time to OE# or
CE#f
Low During Toggle Bit
Polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time (WE# to Address)
Min
45
ns
t
AHT
Address Hold Time From CE#f or OE# High During Toggle Bit
Polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEH
OE# Hold Time
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
t
OEPH
Output Enable High During Toggle Bit Polling
Min
20
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write (OE# High to CE#f Low)
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time (CE#f to WE#)
Min
0
ns
t
ELWL
t
CS
CE#f Setup Time (WE# to CE#f)
Min
0
ns
t
EHWH
t
WH
WE# Hold Time (CE#f to WE#)
Min
0
ns
t
WHEH
t
CH
CE#f Hold Time (CE#f to WE#)
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
30
35
ns
t
ELEH
t
CP
CE#f Pulse Width
Min
30
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
5
μs
Word
Typ
7
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
t
VCS
V
CC
f Setup Time (Note 1)
Min
50
μs
t
RB
Write Recovery Time From RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid To RY/BY# Delay
Max
90
ns
相关PDF资料 |
PDF描述 |
|---|---|
| M41000001Z | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000020 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000021 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000022 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000023 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M41000001Z | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000020 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000021 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000022 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000023 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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