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参数资料
| 型号： | M41000001Y |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | 32兆位（4个M × 8位/ 2米x 16位），3.0伏的CMOS只，同时作业闪存和4兆位（512亩x 8-Bit/256亩x 16位），静态存储器 |
| 文件页数： | 52/65页 |
| 文件大小： | 582K |
| 代理商： | M41000001Y |
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November 12, 2001
Am41DL32x4G
51
P R E L I M I N A R Y
AC CHARACTERISTICS
OE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
OE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ6/DQ2
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
CE#f
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 23.
Toggle Bit Timings (During Embedded Algorithms)
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f to
toggle DQ2 and DQ6.
Figure 24.
DQ2 vs. DQ6
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
相关PDF资料 |
PDF描述 |
|---|---|
| M41000001Z | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000020 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000021 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000022 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000023 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M41000001Z | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000020 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000021 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000022 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000023 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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