参数资料
型号: M41000001Y
厂商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
中文描述: 32兆位(4个M × 8位/ 2米x 16位),3.0伏的CMOS只,同时作业闪存和4兆位(512亩x 8-Bit/256亩x 16位),静态存储器
文件页数: 5/65页
文件大小: 582K
代理商: M41000001Y
4
Am41DL32x4G
November 12, 2001
P R E L I M I N A R Y
Figure 24. DQ2 vs. DQ6.................................................................. 51
Temporary Sector/Sector Block Unprotect .............................52
Figure 25. Temporary Sector/Sector Block Unprotect
Timng Diagram............................................................................... 52
Figure 26. Sector/Sector Block Protect and Unprotect
Timng Diagram............................................................................... 53
Alternate CE#f Controlled Erase and ProgramOperations ....54
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Op-
eration Timngs................................................................................ 55
SRAMRead Cycle ..................................................................56
Figure 28. SRAM Read Cycle
Address Controlled....................... 56
Figure 29. SRAM Read Cycle......................................................... 57
SRAMWrite Cycle ..................................................................58
Figure 30. SRAM Write Cycle
WE# Control................................. 58
Figure 31. SRAM Write Cycle
CE1#s Control............................. 59
Figure 32. SRAM Write Cycle
UB#s and LB#s Control............... 60
Flash Erase And Programmng Performance ........................61
Flash Latchup Characteristics. . . . . . . . . . . . . . . 61
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 61
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 61
SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 62
Figure 33. CE1#s Controlled Data Retention Mode....................... 62
Figure 34. CE2s Controlled Data Retention Mode......................... 62
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 63
FLB073
73-Ball Fine-Pitch Grid Array 8 x 11.6 mm.............63
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 64
Revision A (October 25, 2001) ...............................................64
相关PDF资料
PDF描述
M41000001Z 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000020 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000021 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000022 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000023 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
相关代理商/技术参数
参数描述
M41000001Z 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000020 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000021 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000022 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000023 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM