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参数资料
型号： M410000087
厂商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述： 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同时作业闪存和8兆位（1 M中的x 8-Bit/512亩x 16位），静态存储器
文件页数： 37/63页
文件大小： 573K
代理商： M410000087
36
Am41DL6408G
August 19, 2002
P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
V
CC
= V
CC max
; RESET# = 12.5 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
V
CC
= V
CC max
,
WP#/ACC = V
ACC max
±
1.0
μA
I
LIT
RESET# Input Load Current
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
LIA
ACC Input Leakage Current
35
μA
I
CC1
f
Flash V
CC
Active Read Current
(Notes 1, 2)
CE#f = V
IL
,
OE# = V
IH
,
Byte Mode
5 MHz
10
16
mA
1 MHz
2
4
CE#f = V
IL
,
OE# =
V
IH
,
Word Mode
5 MHz
10
16
1 MHz
2
4
I
CC2
f
Flash V
CC
Active Write Current
(Notes 2, 3)
CE#f = V
IL
,
OE# =
V
IH
, WE# = V
IL
15
30
mA
I
CC3
f
Flash V
CC
Standby Current (Note 2)
V
CC
f = V
CC max
, CE#f, RESET#,
WP#/ACC = V
CC
f
±
0.3 V
V
CC
f = V
CC max
, RESET# = V
SS
±
0.3 V, WP#/ACC = V
CC
f
±
0.3 V
V
CC
f = V
CC max
, V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
0.2
5
μA
I
CC4
f
Flash V
CC
Reset Current (Note 2)
0.2
5
μA
I
CC5
f
Flash V
CC
Current Automatic Sleep
Mode (Notes 2, 4)
0.2
5
μA
I
CC6
f
Flash V
CC
Active
Read-While-Program Current (Notes
1, 2)
CE#f = V
IL
,
OE# = V
IH
Byte
21
45
mA
Word
21
45
I
CC7
f
Flash V
CC
Active Read-While-Erase
Current (Notes 1, 2)
CE#f = V
IL
, OE# = V
IH
Byte
21
45
mA
Word
21
45
I
CC8
f
Flash V
CC
Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE#f = V
IL
, OE#f = V
IH
17
35
mA
I
ACC
ACC Accelerated Program Current,
Word or Byte
CE#f = V
IL
, OE# = V
IH
ACC pin
5
10
mA
V
CC
pin
15
30
mA
V
IL
V
IH
Input Low Voltage
–0.2
0.8
V
Input High Voltage
2.4
V
CC
+ 0.2
V
V
HH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
V
ID
Voltage for Sector Protection,
Autoselect and Temporary Sector
Unprotect
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
f = V
CC
s =
V
CC min
I
OH
= –2.0 mA, V
CC
f = V
CC
s =
V
CC min
I
OH
= –100 μA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
0.85 x
V
CC
V
CC
–0.4
V
V
OH2
V
LKO
Flash Low V
CC
Lock-Out Voltage
(Note 5)
2.3
2.5
V
相关PDF资料
PDF描述
M41000001W 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M41000001X 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M41000001Y 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M41000001Z 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
M410000020 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
相关代理商/技术参数
参数描述
M410000095 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
M410000096 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
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M410020AA7C 制造商:Baumer Electric Ag 功能描述:
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