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| 型号： | M410000087 |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同时作业闪存和8兆位（1 M中的x 8-Bit/512亩x 16位），静态存储器 |
| 文件页数： | 41/63页 |
| 文件大小： | 573K |
| 代理商： | M410000087 |
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40
Am41DL6408G
August 19, 2002
P R E L I M I N A R Y
TEST CONDITIONS
Table 16.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Test Condition
70, 85
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 12.
Input Waveforms and Measurement Levels
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| M41000001W | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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| M410000020 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M410000095 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000096 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410020A08L | 制造商:Baumer Electric Ag 功能描述: |
| M410020A08M | 制造商:Baumer Electric Ag 功能描述: |
| M410020AA7C | 制造商:Baumer Electric Ag 功能描述: |
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