- 您现在的位置：买卖IC网 > PDF目录365226 > M410000087 (Advanced Micro Devices, Inc.) 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM PDF资料下载
参数资料
| 型号： | M410000087 |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同时作业闪存和8兆位（1 M中的x 8-Bit/512亩x 16位），静态存储器 |
| 文件页数： | 58/63页 |
| 文件大小： | 573K |
| 代理商： | M410000087 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页当前第58页第59页第60页第61页第62页第63页
August 19, 2002
Am41DL6408G
57
P R E L I M I N A R Y
AC CHARACTERISTICS
Notes:
1. CE1#s controlled, if CIOs is low, ignore UB#s and LB#s timing.
2. t
CW
is measured from CE1#s going low to the end of write.
3. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CE1#s or WE# going high.
4. t
AS
is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP
) of low CE1#s and low WE#. A write begins when CE1#s goes low and WE# goes low
when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation.
A write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP
is measured from the beginning of write
to the end of write.
Figure 31.
SRAM Write Cycle—CE1#s Control
Address
Data Valid
UB#s, LB#s
WE#
Data In
Data Out
High-Z
High-Z
t
WC
CE1#s
CE2s
t
AW
t
AS
(See Note 2 )
t
BW
t
CW
(See Note 3)
t
WR
(See Note 4)
t
WP
(See Note 5)
t
DW
t
DH
相关PDF资料 |
PDF描述 |
|---|---|
| M41000001W | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001X | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001Y | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001Z | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000020 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M410000095 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000096 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410020A08L | 制造商:Baumer Electric Ag 功能描述: |
| M410020A08M | 制造商:Baumer Electric Ag 功能描述: |
| M410020AA7C | 制造商:Baumer Electric Ag 功能描述: |
发布紧急采购，3分钟左右您将得到回复。