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参数资料
| 型号： | M470L3224FT0-LA0 |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封装： | SODIMM-200 |
| 文件页数： | 17/17页 |
| 文件大小： | 308K |
| 代理商： | M470L3224FT0-LA0 |
DDR SDRAM
128MB, 256MB Unbuffered SODIMM
Rev. 1.3 July 2005
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
Unit
Notes
IDD0
440
360
320
mA
IDD1
600
500
460
mA
IDD2P
161212
12
mA
IDD2F
120
100
80
mA
IDD2Q
100
80
72
mA
IDD3P
220
140
120
mA
IDD3N
300
220
180
mA
IDD4R
880
800
680
mA
IDD4W
1,000
760
620
mA
IDD5
800
720
660
mA
IDD6
Normal
121212
12
mA
Low power
6
mA
Optional
IDD7A
1,520
1,400
1,200
mA
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
Unit
Notes
IDD0
740
580
500
mA
IDD1
900
720
640
mA
IDD2P
322424
24
mA
IDD2F
240
200
160
mA
IDD2Q
200
160
144
mA
IDD3P
440
280
240
mA
IDD3N
600
440
360
mA
IDD4R
1,180
1,020
860
mA
IDD4W
1,300
980
800
mA
IDD5
1,100
940
840
mA
IDD6
Normal
242424
24
mA
Low power
12
mA
Optional
IDD7A
1,820
1,620
1,380
mA
9.1 M470L1624FT(U)0 [ (16M x 64) 128MB Module ]
9.2 M470L3224FT(U)0 [ (32M x 64) 256MB Module ]
9.0 DDR SDRAM IDD spec table
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M470L3224FU0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM SODIMM |
| M470L3224FU0-CA2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM SODIMM |
| M470L3224FU0-CB0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM SODIMM |
| M470L3224FU0-CB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM SODIMM |
| M470L3224HU0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
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