参数资料
型号: M48T08SH
厂商: 意法半导体
英文描述: 64 Kbit 8Kb x 8 TIMEKEEPER SRAM
中文描述: 64千位的8kB × 8计时器的SRAM
文件页数: 16/27页
文件大小: 398K
代理商: M48T08SH
M48T08, M48T08Y, M48T18
16/27
V
CC
Noise And Negative Going Transients
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in Figure
12
) is recommended in order to provide the need-
ed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Figure 12. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
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相关代理商/技术参数
参数描述
M48T08Y 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5V, 64Kbit (8 Kb x 8) TIMEKEEPER㈢ SRAM
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M48T08Y-100MH1E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x 8 TIMEKEEPER SRAM
M48T08Y-100MH1F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x 8 TIMEKEEPER SRAM
M48T08Y-100MH1TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x 8 TIMEKEEPER SRAM