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参数资料
| 型号： | M48T212V-85MH1E |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 时钟/数据恢复及定时提取 |
| 英文描述： | REAL TIME CLOCK, PDSO44 |
| 封装： | 0.330 INCH, ROHS COMPLIANT, PLASTIC, SOH-44 |
| 文件页数： | 21/35页 |
| 文件大小： | 348K |
| 代理商： | M48T212V-85MH1E |
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DC and AC parameters
M48T212V
Table 13.
Capacitance
Table 14.
DC characteristics
Symbol
Parameter(1)(2)
1.
Effective capacitance measured with power supply at 3.3V (M48T212V); sampled only, not 100% tested.
2.
At 25°C, f = 1MHz.
Min
Max
Unit
CIN
Input capacitance
10
pF
COUT
(3)
3.
Outputs deselected.
Input/output capacitance
10
pF
Sym
Parameter
Test condition(1)
1.
Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 3.0 to 3.6V (except where noted).
M48T212V
Unit
–85
Min
Typ
Max
ILI
(2)
2.
RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ
resistor.
Input leakage current
0V
≤ VIN ≤ VCC
±1
A
ILO
(3)
3.
Outputs deselected.
Output leakage current
0V
≤ VOUT ≤ VCC
±1
A
ICC
Supply current
Outputs open
4
10
mA
ICC1
Supply current (standby) TTL
E = VIH
3mA
ICC2
Supply current (standby) CMOS
E = VCC –0.2
2
mA
IBAT
Battery current OSC ON
VCC = 0V
575
800
nA
Battery current OSC ON(4)
4.
IBAT (OSC ON) = Industrial Temperature Range - Grade 6 device.
950
1250
nA
Battery current OSC OFF
100
nA
VIL
Input low voltage
–0.3
0.8
V
VIH
Input high voltage
2.0
VCC +
0.3
V
VOL
Output low voltage
IOL = 2.1mA
0.4
V
Output low voltage (open drain)(5)
5.
For IRQ/FT & RST pins (open drain).
IOL = 10mA
0.4
V
VOH
Output high voltage
IOH = –1.0mA
2.4
V
VOHB
(6)
6.
Conditioned outputs (E1CON - E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher
leakage currents will reduce battery life.
VOH battery back-up
IOUT2 = –1.0A
2.0
3.6
V
IOU1
(7)
7.
External SRAM must match TIMEKEEPER supervisor chip VCC specification.
VOUT current (active)
VOUT1 > VCC –0.3
70
mA
IOUT2
VOUT current (battery back-up)
VOUT2 > VBAT –0.3
100
A
VPFD
Power-fail deselect voltage
2.7
2.9
3.0
V
VSO
Battery back-up switchover voltage
VPFD –
100mV
V
VBAT
Battery voltage
3.0
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T212V-85MH1F | 功能描述:监控电路 SRAM TK 16X8 85ns RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| M48T212V-85MH1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5V/3.3V TIMEKEEPER[ CONTROLLER |
| M48T212V-85MH6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5V/3.3V TIMEKEEPER[ CONTROLLER |
| M48T212V-85MH6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5V/3.3V TIMEKEEPER CONTROLLER Supervisor |
| M48T212V-85MH6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5V/3.3V TIMEKEEPER CONTROLLER Supervisor |
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