参数资料
型号: M54522FP
元件分类: 小信号晶体管
英文描述: 400 mA, 40 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
文件页数: 1/4页
文件大小: 114K
代理商: M54522FP
Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
CIRCUIT DIAGRAM
1
IN1
IN2
IN3
IN4
IN5
IN6
IN7
→COM COMMON
→O8
IN8
GND
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
→O7
→O6
→O5
→O4
→O3
→O2
→O1
1
NC
IN1
IN2
IN3
IN4
IN5
IN6
COMMON
→O8
IN7
IN8
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
→COM
GND
10
11
→O7
→O6
→O5
→O4
→O2
→O3
→O1
NC
NC : No connection
Package type 18P4G(P)
INPUT
OUTPUT
INPUT
OUTPUT
Package type 20P2N-A(FP)
20K
2K
20K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The eight circuits share the COM and GND.
DESCRIPTION
M54522P and M54522FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO
≥ 40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and interfaces between microcom-
puter output and high-current or high-voltage systems
FUNCTION
The M54522P and M54522FP each have eight circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20k
between input transistor bases and input pins.
A spike-killer clamping diode is provided between each out-
put pin (collector) and COM pin. The output transistor emit-
ters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54522FP is enclosed in a molded small flat package,
enabling space-saving design.
相关PDF资料
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