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参数资料
| 型号： | M54526P |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 50 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 82K |
| 代理商： | M54526P |
Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54526P and M54526FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO
≥ 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with PMOS IC output of 8-18V
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54526P and M54526FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 10.5k
between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output tran-
sistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
The M54526FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
5K
3K
10.5K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the COM and GND.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
1
IN1
→
IN2
→
IN3
→
IN4
→
IN5
→
IN6
→
IN7
→
→COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
16P4(P)
Package type 16P2N-A(FP)
INPUT
OUTPUT
相关PDF资料 |
PDF描述 |
|---|---|
| M54526FP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M54532FP | 1500 mA, 50 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M54568L | 30 mA, 20 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| M54569P | 0.03 A, 20 V, 8 CHANNEL, PNP, Si, POWER TRANSISTOR |
| M54585KP | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M54527P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54528P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7- UNIT 150MA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54529AP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:S-UNIT 320mA TRANSISTOR ARRAY WITH STORE |
| M54529P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:S-UNIT 320mA TRANSISTOR ARRAY WITH STORE |
| M54530P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7 UNIT 400MA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
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