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参数资料
| 型号： | M54532FP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 50 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, 16P2N-A, 16 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 79K |
| 代理商： | M54532FP |
Aug. 1999
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54532P and M54532FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO
≥ 50V)
High-current driving (Ic(max) = 1.5A)
With clamping diodes
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
FUNCTION
The M54532P and M54532FP each have four circuits con-
sisting of NPN Darlington transistors. They have resistance
of 340
between input transistor bases and input pins. A
clamping diode is provided between each output pin (collec-
tor) and COM pin. The output transistor emitters are all con-
nected to the GND pin.
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
IF
V
A
V
W
°C
Ratings
Symbol
Parameter
Conditions
Unit
–0.5 ~ +50
1.5
–0.5 ~ +10
50
1.5
1.25
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
A
5.5K
3K
340
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The four circuits share the COM and GND.
Output, H
Current per circuit output, L
Pulse Width
≤ 10ms, Duty Cycle ≤ 5%
Pulse Width
≤ 100ms, Duty Cycle ≥ 5%
Ta = 25
°C, when mounted on board
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
VCEO
IC
VI
VR
Pd
Topr
Tstg
Clamping diode forward current
1
OUTPUT4
INPUT4
INPUT3
OUTPUT3
OUTPUT1
INPUT1
O1
←
IN1
→
INPUT2 IN2
→
COM
COMMON
COM
COMMON
GND
NC
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O3
←IN3
OUTPUT2
O2
←
←IN4
→O4
16P4(P)
Package type 16P2N-A(FP) NC : No connection
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PDF描述 |
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| M54569P | 0.03 A, 20 V, 8 CHANNEL, PNP, Si, POWER TRANSISTOR |
| M54585KP | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M54585P | 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR |
| M54590P | 0.5 A, 80 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M54532P | 制造商:Panasonic Industrial Company 功能描述:DISCD I.C. |
| M54533P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
| M54534FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
| M54534P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
| M54537P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-Unit 350mA Transistor array |
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