参数资料
型号: M54532FP
元件分类: 小信号晶体管
英文描述: 1500 mA, 50 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: PLASTIC, 16P2N-A, 16 PIN
文件页数: 2/4页
文件大小: 79K
代理商: M54532FP
Aug. 1999
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Turn-on time
Turn-off time
CL = 15pF (note 1)
VO
VIH
VIL
2.2
1.7
8.5
100
2.3
V
mA
A
V
ICEO = 100
A
II = 2mA, IC = 1.25A
II = 2mA, IC = 0.7A
VI = 3V
VR = 50V
IF = 1.25A
VCE = 4V, IC = 1A, Ta = 25
°C
V (BR) CEO
II
IR
VF
hFE
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
V
0
3
0
50
6
0.4
0
1.25
0.7
A
VCE (sat)
50
800
1.3
1.1
5
1.6
7000
V
+ : The typical values are those measured under ambient temperature (Ta) of 25
°C. There is no guarantee that these values are obtained under any
conditions.
ns
ton
toff
10
500
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
PG
50
CL
Measured device
OPEN
VO
RL
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, ZO = 50
VP = 3VP-P
(2) Input-output conditions : RL = 8.3
, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
ton
50%
toff
INPUT
OUTPUT
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Limits
Unit
min
typ
max
Parameter
Symbol
IC
Collector current
(Current per 1 cir-
cuit when 4 circuits
are coming on si-
multaneously)
Output voltage
Duty Cycle
P : no more than 4%
FP : no more than 2%
Duty Cycle
P : no more than 18%
FP : no more than 9%
“H” input voltage
“L” input voltage
Collector-emitter breakdown voltage
Input current
Clamping diode reverse current
Clamping diode forward voltage
DC amplification factor
Symbol
Unit
Parameter
Test conditions
Limits
min
typ+
max
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75
°C)
相关PDF资料
PDF描述
M54568L 30 mA, 20 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
M54569P 0.03 A, 20 V, 8 CHANNEL, PNP, Si, POWER TRANSISTOR
M54585KP 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
M54585P 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
M54590P 0.5 A, 80 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
M54532P 制造商:Panasonic Industrial Company 功能描述:DISCD I.C.
M54533P 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
M54534FP 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
M54534P 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
M54537P 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-Unit 350mA Transistor array