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参数资料
| 型号： | M54522P |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.4 A, 40 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 114K |
| 代理商： | M54522P |
Aug. 1999
Collector-emitter breakdown voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
VO
VIL
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
V
mA
V
mA
V
W
°C
–0.5 ~ +40
400
–0.5 ~ +40
400
40
1.79(P)/1.10(FP)
–20 ~ +75
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
V
Parameter
—
0
8
4
0
40
0.5
Limits
min
typ
max
Symbol
Unit
0
—
400
200
30
mA
V
mA
V
A
—
40
—
0.3
—
1000
—
1.15
0.95
0.85
1.5
—
8000
—
2.4
1.6
1.8
2.4
100
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ+
max
V
+ : The typical values are those measured under ambient temperature (Ta) of 25
°C. There is no guarantee that these values are obtained under any
conditions.
ns
—
30
930
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
IC
VIH
Output voltage
“H” input voltage
“L” input voltage
IC ≤ 400mA
IC ≤ 200mA
Duty Cycle
P : no more than 30%
FP : no more than 20%
Duty Cycle
P : no more than 7%
FP : no more than 5%
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
V (BR) CEO
II
VF
IR
hFE
Collector-emitter saturation voltage
VCE (sat)
ICEO = 100
A
VI = 8V, IC = 400mA
VI = 4V, IC = 200mA
VI = 17V
IF = 400mA
VR = 40V
VCE = 4V, IC = 300mA, Ta = 25
°C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75
°C)
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75
°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M54522P_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54522WP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54523FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M54523P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M54524P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
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