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参数资料
| 型号： | M54526FP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 82K |
| 代理商： | M54526FP |
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Collector-emitter breakdown voltage
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
V
A
—
II
V
Parameter
—
0
8
0
50
25
0.5
Limits
min
typ
max
Symbol
Unit
IC
0
—
400
200
mA
Symbol
Unit
Parameter
Test conditions
Limits
min
typ+
max
50
—
1000
—
1.3
0.95
0.9
2.8
1.5
—
2500
—
2.4
1.6
1.5
4.1
2.4
100
—
V
mA
+ : The typical values are those measured under ambient temperature (Ta) of 25
°C. There is no guarantee that these values are obtained under any
conditions.
ns
—
12
230
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
PG
50
CL
Measured device
OPEN
VO
RL
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, ZO = 50
VP = 8VP-P
(2) Input-output conditions : RL = 25
, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
ton
50%
toff
INPUT
OUTPUT
“H” input voltage
“L” input voltage
VO
VIH
VIL
Output voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more than 30%
FP : no more than 25%
ICEO = 100
A
VI = 8V, IC = 400mA
VI = 8V, IC = 200mA
VI = 10V
VI = 25V
IF = 400mA
VR = 50V
VCE = 4V, IC = 350mA, Ta = 25
°C
V (BR) CEO
VF
IR
hFE
VCE (sat)
Collector-emitter saturation voltage
Input current
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75
°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M54526P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54527P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54528P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7- UNIT 150MA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54529AP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:S-UNIT 320mA TRANSISTOR ARRAY WITH STORE |
| M54529P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:S-UNIT 320mA TRANSISTOR ARRAY WITH STORE |
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