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参数资料
| 型号： | M58BW016DB90ZA3FT |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 32 FLASH 3V PROM, 90 ns, PBGA80 |
| 封装： | 10 X 12 MM, 1 MM PITCH, LBGA-80 |
| 文件页数： | 42/63页 |
| 文件大小： | 901K |
| 代理商： | M58BW016DB90ZA3FT |
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Table 27. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
Table 28. Device Geometry Definition
Address A0-A18
Data
Description
1Bh
27h (1)
VDD min, 2.7V
1Ch
36h (1)
VDD max, 3.6V
1Dh
B4h (2)
VPP min
1Eh
C6h (2)
VPP max
1Fh
00h (3)
2n ms typical time-out for Word, DWord prog – Not Available
20h
00h (3)
2n ms, typical time-out for max buffer write – Not Available
21h
0Ah
2n ms, typical time-out for Erase Block
22h
00h (3)
2n ms, typical time-out for chip erase – Not Available
23h
00h (3)
2n x typical for Word Dword time-out max – Not Available
24h
00h
2n x typical for buffer write time-out max – Not Available
25h
04h
2n x typical for individual block erase time-out maximum
26h
00h (3)
2n x typical for chip erase max time-out – Not Available
Address A0-A18
Data
Description
27h
15h
2n number of bytes memory size
28h
03h
Device Interface Sync./Async.
29h
00h
Organization Sync./Async.
2Ah
00h
Page size in bytes, 2n
2Bh
00h
2Ch
02h
Bit7-0 = number of Erase Block Regions in device
2Dh
1Eh
Number (n-1) of blocks of identical size; n=31
2Eh
00h
2Fh
00h
Erase Block region information x 256 bytes per
Erase Block (64Kbytes)
30h
01h
31h
07h
Number (n-1) of blocks of identical size; n=8
32h
00h
33h
20h
Erase Block region information x 256 bytes per
Erase Block (8Kbytes)
34h
00h
相关PDF资料 |
PDF描述 |
|---|---|
| M58BW016DB80ZA6F | 512K X 32 FLASH 3V PROM, 80 ns, PBGA80 |
| M58LW032A | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M58BW016DB90ZA3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB90ZA6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBZA | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DT | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories |
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