参数资料
型号: M58LW064D11N1T
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 4M X 16 FLASH 3V PROM, 110 ns, PDSO56
封装: 14 X 20 MM, PLASTIC, TSOP-56
文件页数: 20/50页
文件大小: 280K
代理商: M58LW064D11N1T
27/50
M58LW064D
Figure 10. Page Read AC Waveforms
Note: 1. VIH = Device Disabled (first edge of E0, E1 or E2), VIL = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
details.
Table 16. Page Read AC Characteristics
Note: For other timings see Table 15, Bus Read AC Characteristics.
Symbol
Parameter
Test Conditio n
M58LW064D
Unit
110
tAXQX1
Address Transition to Output Transition
E=VIL,G= VIL
Min
6
ns
tAVQV1
Address Valid to Output Valid
E=VIL,G= VIL
Max
25
ns
AI06214
E2, E1, E0(1)
G
A3-A22
DQ0-DQ15
VALID
tAXQX
tELQX
tAVQV
tGLQV
tEHQX
tGHQZ
OUTPUT
A1-A2
tAXQX1
VALID
tGHQX
tEHQZ
tELQV
tGLQX
tAVQV1
相关PDF资料
PDF描述
M58WR032FT60ZB6T 2M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
M58WR064EBZB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128EBZB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M5913 COMBINED SINGLE CHIP PCM CODEC AND FILTER
M5913B1 COMBINED SINGLE CHIP PCM CODEC AND FILTER
相关代理商/技术参数
参数描述
M58LW128A 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128A150N1 功能描述:闪存 8Mx16 or 4Mx32 150ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M58LW128A150N1E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128A150N1F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128A150N1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories