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参数资料
| 型号： | M58LW064D11N1T |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 110 ns, PDSO56 |
| 封装： | 14 X 20 MM, PLASTIC, TSOP-56 |
| 文件页数： | 3/50页 |
| 文件大小： | 280K |
| 代理商： | M58LW064D11N1T |
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M58LW064D
STS is not Low during a reset unless the reset was
applied when the Program/Erase controller was
active
Program/Erase Enable (VPEN). The
Program/
Erase Enable input, VPEN, is used to protect all
blocks, preventing Program and Erase operations
from affecting their data.
Program/Erase Enable must be kept High during
all Program/Erase Controller operations, other-
wise the operations is not guaranteed to succeed
and data may become corrupt.
VDD Supply Voltage. The Supply Voltage, VDD,
is the core power supply. All internal circuits draw
their current from the VDD pin, including the Pro-
gram/Erase Controller.
A 0.1
F capacitor should be connected between
the Supply Voltage, VDD, and the Ground, VSS,to
decouple the current surges from the power sup-
ply. The PCB track widths must be sufficient to
carry the currents required during all operations of
the parts, see Table 14, DC Characteristics, for
maximum current supply requirements.
Input/Output Supply Voltage (VDDQ). The
In-
put/Output Supply Voltage, VDDQ, is the input/out-
put buffer power supply. All input and output pins
and voltage references are powered and mea-
sured relative to the Input/Output Supply Voltage
pin, VDDQ.
The Input/Output Supply Voltage, VDDQ, must al-
ways be equal or less than the VDD Supply Volt-
age, including during Power-Up.
A 0.1
F capacitor should be connected between
the Input/Output Supply Voltage, VDDQ, and the
Ground, VSSQ, to decouple the current surges
from the power supply. If VDDQ and VDD are con-
nected together then only one decoupling capaci-
tor is required.
Ground (VSS). Ground, VSS, is the reference for
all core power supply voltages.
Ground (VSSQ). Ground, VSSQ, is the reference
for input/output voltage measurements. It is es-
sential to connect VSS and VSSQ to the same
ground.
Table 2. Device Enable
Note: For single device operations, E2 and E1 can be connected to VSS.
E2
E1
E0
Device
VIL
Enabled
VIL
VIH
Disabled
VIL
VIH
VIL
Disabled
VIL
VIH
Disabled
VIH
VIL
Enabled
VIH
VIL
VIH
Enabled
VIH
VIL
Enabled
VIH
Disabled
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58LW128A | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N1 | 功能描述:闪存 8Mx16 or 4Mx32 150ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M58LW128A150N1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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