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参数资料
| 型号： | M58WR032FT60ZB6T |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 60 ns, PBGA56 |
| 封装： | 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56 |
| 文件页数： | 60/86页 |
| 文件大小： | 1516K |
| 代理商： | M58WR032FT60ZB6T |
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Obsolete
Product(s)
- Obsolete
Product(s)
63/86
M58WR032FT, M58WR032FB
Table 33. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
27h
0016h
Device Size = 2n in number of bytes
4 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0000h
Maximum number of bytes in multi-byte program or page = 2n
NA
2Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2
M5
8WR
0
3
2
F
T
2Dh
2Eh
003Eh
0000h
Region 1 Information
Number of identical-size erase blocks = 003Eh+1
63
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase blocks = 0007h+1
8
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
35h
38h
reserved
Reserved for future erase block region information
NA
M
5
8W
R0
32
FB
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
8
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8 KByte
31h
32h
003Eh
0000h
Region 2 Information
Number of identical-size erase block = 003Eh+1
63
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64 KByte
35h
38h
reserved
Reserved for future erase block region information
NA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR032FT70ZB6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT70ZB6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT70ZB6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT80ZB6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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