参数资料
型号: M58WR032FT60ZB6T
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 2M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封装: 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件页数: 72/86页
文件大小: 1516K
代理商: M58WR032FT60ZB6T
Obsolete
Product(s)
- Obsolete
Product(s)
M58WR032FT, M58WR032FB
74/86
Figure 27. Erase Suspend & Resume Flowchart and Pseudo Code
Note: The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command.
Write 70h
AI10116b
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR6 = 1
Erase Continues with
Bank in Read Status
Register Mode
Write D0h
Read data from another block
or
Program/Protection Register Program
or
Block Lock/Unlock/Lock-Down
Start
Write B0h
Erase Complete
Write FFh
Read Data
Write FFh
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
/*read or program data from another block*/
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
writeToFlash (bank_address, 0x70) ;
/*read status register to check if erase has completed */
}
Write 70h(1)
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