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参数资料
| 型号： | M68AW127BM70N1T |
| 厂商： | 意法半导体 |
| 英文描述： | 1Mbit 128K x8, 3.0V Asynchronous SRAM |
| 中文描述： | 1Mbit的128K的× 8，3.0V异步SRAM |
| 文件页数： | 3/20页 |
| 文件大小： | 327K |
| 代理商： | M68AW127BM70N1T |
3/20
M68AW127B
SUMMARY DESCRIPTION
The M68AW127B is a 1Mbit (1,048,576 bit) CMOS
SRAM, organized as 131,072 words by 8 bits. The
device features fully static operation requiring no
external clocks or timing strobes, with equal ad-
dress access and cycle times. It requires a single
2.7 to 3.6V supply.
This device has an automatic power-down feature,
reducing the power consumption by over 99%
when deselected.
The M68AW127B is available in SO32, TSOP32
8x20mm and TSOP32 8x13.4mm packages.
Figure 2. Logic Diagram
Table 1. Signal Names
AI05972b
17
A0-A16
W
DQ0-DQ7
VCC
M68AW127B
G
VSS
8
E1
E2
A0-A16
Address Inputs
DQ0-DQ7
Data Input/Output
E1
Chip Enable
E2
Chip Enable
G
Output Enable
W
Write Enable
V
CC
Supply Voltage
V
SS
Ground
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| M68AW127BN | 1Mbit 128K x8, 3.0V Asynchronous SRAM |
| M68AW127 | 1Mbit 128K x8, 3.0V Asynchronous SRAM |
| M68AW127BL70NK1T | Thick Film Resistor Network; Series:RNA4A; Resistance:1kohm; Resistance Tolerance:+/- 5 %; Power Rating:0.063W; Voltage Rating:25V; Temperature Coefficient:+/-250 ppm; Package/Case:10-SOIC; Network Circuit Type:Dual Termination |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M68AW127BM70N6 | 制造商:STMicroelectronics 功能描述: |
| M68AW127BM70N6T | 制造商:STMicroelectronics 功能描述: |
| M68AW127BM70NK1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1Mbit 128K x8, 3.0V Asynchronous SRAM |
| M68AW127BM70NK6 | 功能描述:静态随机存取存储器 1 MBIT (128K X8)静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M68AW127BM70NK6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1Mbit 128K x8, 3.0V Asynchronous SRAM |
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