参数资料
型号: M68AW127BM70N1T
厂商: 意法半导体
英文描述: 1Mbit 128K x8, 3.0V Asynchronous SRAM
中文描述: 1Mbit的128K的× 8,3.0V异步SRAM
文件页数: 6/20页
文件大小: 327K
代理商: M68AW127BM70N1T
M68AW127B
6/20
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 3. Operating and AC Measurement Conditions
Figure 6. AC Measurement I/O Waveform
Figure 7. AC Measurement Load Circuit
Parameter
M68AW127B
V
CC
Supply Voltage
2.7 to 3.6V
Ambient Operating Temperature
Range 1
0 to 70°C
Range 6
–40 to 85°C
Load Capacitance (C
L
)
100pF
Output Circuit Protection Resistance (R
1
)
3.0k
Load Resistance (R
2
)
3.1k
Input Rise and Fall Times
1ns/V
Input Pulse Voltages
0 to V
CC
Input and Output Timing Ref. Voltages
V
CC
/2
Output Transition Timing Ref. Voltages
V
RL
= 0.3V
CC
; V
RH
= 0.7V
CC
AI04831
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
Output Transition Timing Reference Voltage
0V
0.7VCC
0.3VCC
AI05814
VCC
OUT
CL includes JIG capacitance
DEVICE
UNDER
TEST
CL
R1
R2
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