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参数资料
| 型号： | M69AW024BE |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| 中文描述： | 16兆位（1米× 16）3V的异步移动存储芯片 |
| 文件页数： | 10/25页 |
| 文件大小： | 147K |
| 代理商： | M69AW024BE |
M69AW024BE
10/25
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. Exposure to Abso-
lute Maximum Rating conditions for extended
periods may affect device reliability. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied.
Table 3. Absolute Maximum Ratings
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), and the European directive on Restrictions on
Hazardous Substances (RoHS) 2002/95/EU.
Symbol
Parameter
Min
Max
Unit
I
O
Output Current
–50
50
mA
T
A
Ambient Operating Temperature
–30
85
°C
T
LEAD
Lead Temperature During Soldering
(1)
°C
T
STG
Storage Temperature
–55
125
°C
V
CC
Core Supply Voltage
–0.5
3.6
V
V
IO
Input or Output Voltage
–0.5
3.6
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M69AW024BE60ZB1F | 制造商:Micron Technology Inc 功能描述:16MB 3V WIRELESS NOR DEVICE - Tape and Reel |
| M69AW024BE60ZB8F | 功能描述:静态随机存取存储器 16 Mbit 1M x16 3V Async P静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69AW024BL60ZB8T | 功能描述:静态随机存取存储器 16 MBIT (1M X16) 3V Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69AW024BL70ZB8T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M69AW048B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (2M x16) 3V Asynchronous PSRAM |
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