- 您现在的位置：买卖IC网 > PDF目录377835 > M69AW024BE (意法半导体) 16 Mbit (1M x16) 3V Asynchronous PSRAM PDF资料下载
参数资料
| 型号： | M69AW024BE |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| 中文描述： | 16兆位（1米× 16）3V的异步移动存储芯片 |
| 文件页数： | 13/25页 |
| 文件大小： | 147K |
| 代理商： | M69AW024BE |
13/25
M69AW024BE
Table 7. Read and Standby Modes AC Characteristics
Note: 1. The maximum value of this timing is applicable if E1 is kept Low with addresses unchanged.If needed by the system operation,
please contact your local ST representative for relaxation of the 1000ns limitation.
2. Addresses should not be changed during t
AVAX
(min).
3. These parameters are measured according to the conditions on input and output timing reference voltage shown on
Figure 6., AC
Measurement I/O Waveform
.
4. The output load capacitance is 5pF without any other load.
5. These timings are given for E1 Low.
6. t
AVAX
(min) must be satisfied.
7. If the current value of t
WHGL
is lower than the minimum value given in the above table, t
AVQV
during the following Read operation
may increase by t
WHGL
(current)
–
t
WHGL
(min).
8. All timings are measured according to the conditions for output transition timing reference voltage shown on
Figure 6., AC Mea-
surement I/O Waveform
.
Symbol
Alt.
Parameter
M69AW024BE
Unit
–60
Min
Max
t
AVAX,
t
ELEH
(1,2)
t
RC
Read Cycle Time
70
1000
ns
t
ELQV(3)
t
CE
Chip Enable Access Time
60
ns
t
GLQV(3)
t
OE
Output Enable Access Time
40
ns
t
AVQV(3,5)
t
AA
Address Access Time
60
ns
t
BLQV(3)
t
BA
LB, UB Low to Output Valid
30
ns
t
AXQX,
t
GHQX,
t
BHQX
, t
EHQX
(8)
t
OH
Output Hold Time after Chip Enable Low
5
ns
t
ELQX(4,8)
t
CLZ
Chip Enable Low to Output Low-Z
5
ns
t
GLQX(4,8)
t
OLZ
Output Enable Low to Output Low-Z
0
ns
t
BLQX(4,8)
t
BLZ
LB, UB Low to Output Low-Z
0
ns
t
EHQZ(8)
t
CHZ
Chip Enable High to Output Hi-Z
20
ns
t
GHQZ(8)
t
OHZ
Output Enable High to Output Hi-Z
20
ns
t
BHQZ(8)
t
BHZ
LB, UB High to Output Hi-Z
20
ns
t
AVEL
t
ASC
Address Set-up Time to Chip Enable Low
–5
ns
t
AVGL
t
ASO
Address Valid to Output Enable Low
10
ns
t
AXAV(5)
t
AX
Address Invalid Time
10
ns
t
EHAX(6)
t
CHAH
Chip Enable High to Address Hold Time
–5
ns
t
GHAX
t
OHAH
Output Enable High to Address Hold Time
–5
ns
t
WHGL(7)
t
WHOL
Write Enable High to Output Enable Low (Read Operations)
10
1000
ns
t
EHEL
t
CP
Chip Enable High Pulse Width
10
ns
相关PDF资料 |
PDF描述 |
|---|---|
| M69AW024BE60ZB8F | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M7040N | 64K x 72-bit Entry NETWORK PACKET SEARCH ENGINE |
| M7040N-066ZA1T | CAP 0.01PF 50V 10% X7R AXIAL BULK P-MIL-PRF-39014 |
| M7040N-083ZA1T | CAP 5600PF 100V 10% X7R AXIAL BULK P-MIL-PRF-39014 |
| M7040N-100ZA1T | 64K x 72-bit Entry NETWORK PACKET SEARCH ENGINE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M69AW024BE60ZB1F | 制造商:Micron Technology Inc 功能描述:16MB 3V WIRELESS NOR DEVICE - Tape and Reel |
| M69AW024BE60ZB8F | 功能描述:静态随机存取存储器 16 Mbit 1M x16 3V Async P静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69AW024BL60ZB8T | 功能描述:静态随机存取存储器 16 MBIT (1M X16) 3V Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69AW024BL70ZB8T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M69AW048B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (2M x16) 3V Asynchronous PSRAM |
发布紧急采购，3分钟左右您将得到回复。