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参数资料
| 型号： | M8803F3W-15K1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52 |
| 封装： | PLASTIC, LCC-52 |
| 文件页数： | 8/85页 |
| 文件大小： | 601K |
| 代理商： | M8803F3W-15K1 |
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M88 FAMILY
16/85
a
Read
operation).
Flash
memory
specific
features:
t Data Polling is effective after the fourth Write
pulse (for programming) or after the sixth Write
pulse (for Erase). It must be performed at the
address being programmed or at an address
within the Flash sector being erased.
t During an Erase instruction, DQ7 outputs a ‘0’.
After completion of the instruction, DQ7 will output
the last bit programmed (it is a ‘1’ after erasing).
t If the byte to be programmed is in a protected
Flash sector, the instruction is ignored.
t If all the Flash sectors to be erased are
protected, DQ7 will be set to ‘0’ for about 100
s,
and then return to the previous addressed byte.
No erasure will be performed.
Toggl e Flag DQ6
The M88x3Fxx FLASH+PSD offers another way
for determining when the EEPROM write or the
Flash memory Program instruction is completed.
During the internal Write operation and when
either the FSi or EESi/CSBOOTi is true, the DQ6
will toggle from ‘0’ to ‘1’ and ‘1’ to ‘0’ on
subsequent attempts to read any byte of the
memory.
When the internal cycle is complete, the toggling
will stop and the data read on the Data Bus D0-7
is the addressed memory byte. The device is now
accessible for a new Read or Write operation. The
operation is finished when two successive reads
yield the same output data. Flash memory specific
features:
t The Toggle bit is effective after the fourth Write
pulse (for programming) or after the sixth Write
pulse (for Erase).
t If the byte to be programmed belongs to a
protected Flash sector, the instruction is ignored.
t If all the Flash sectors selected for erasure are
protected, DQ6 will toggle to ‘0’ for about 100
s
and then return to the previous addressed byte.
Error Flag DQ5
During a correct Program or Erase, the Error bit
will set to ‘0’. This bit is set to ‘1’ when there is a
failure during Flash byte programming, Sector
erase, or Bulk Erase.
In the case of Flash programming, the Error Bit
indicates the attempt to program a Flash bit(s)
from the programmed state (0) to the erased state
(1), which is not a valid operation. The Error bit
may also indicate a time-out condition while
attempting to program a byte.
In case of an error in Flash sector erase or byte
program, the Flash sector in which the error
occurred or to which the programmed byte
belongs must no longer be used. Other Flash
sectors may still be used. The Error bit resets after
the Reset instruction.
Erase Time-out Flag DQ3 (Flash Memory only)
The Erase Timer bit reflects the time-out period
allowed between two consecutive Sector Erase
instructions. The Erase timer bit is set to ‘0’ after a
Sector Erase instruction for a time period of 100
s
+
20%
unless
an
additional
Sector
Erase
instruction is decoded. After this time period or
when the additional Sector Erase instruction is
decoded, DQ3 is set to ‘1’.
Writing to the Optional EEPROM (M8813F1x
only)
Data may be written a byte at a time to the
EEPROM using simple write operations, much like
writing to an SRAM. Unlike SRAM though, the
completion of each byte write must be checked
before the next byte is written. To speed up this
process, the M88x3Fxx FLASH+PSD offers a
Page write feature to allow writing of several bytes
before checking status.
To prevent inadvertent writes to EEPROM, the
M88x3Fxx FLASH+PSD offers a Software Data
Protect (SDP) mode. Once enabled, SDP forces
the MCU to “unlock” the EEPROM before altering
its
contents,
much
like
Flash
memory
programming.
Write a Byte to EEPROM
A write operation is initiated when an EEPROM
select signal (EESi) is true and the write strobe
signal (WR) into the M88x3Fxx FLASH+PSD is
true. If the M88 Family detects no additional writes
within 200
s, an internal storage operation is
initiated. Internal storage to EEPROM memory
technology typically takes a few milliseconds to
complete.
The status of the write operation is obtained by the
MCU reading the Data Polling or Toggle bits (as
detailed in the section entitled “Read”, on page
13), or the Ready/Busy output pin (the section
entitled “The Ready/Busy Pin (PC3)”, on page 12).
Keep in mind that the MCU does not need to erase
a location in EEPROM before writing it. Erasure is
performed automatically as an internal process.
Write a Page to EEPROM (M8813F1x only)
Writing data to EEPROM using page mode is
more efficient than writing one byte at a time. The
M88x3Fxx FLASH+PSD EEPROM has a 64 byte
volatile buffer that the MCU may fill before an
internal EEPROM storage operation is initiated.
Page mode timing approaches a 64:1 advantage
over the time it takes to write individual bytes.
To invoke page mode, the MCU must write to
EEPROM locations within a single page, with no
more than 200
s between individual byte writes.
A single page means that address lines A14 to A6
相关PDF资料 |
PDF描述 |
|---|---|
| M8803F2W-15T1 | 1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP52 |
| M8813F3W-15K1 | 1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52 |
| M8813F3Y-90K1 | 1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52 |
| M8813F3Y-90T1 | 1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP52 |
| M8803F3Y-90K1T | 1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M8805/100-007 | 制造商:OTTO Engineering Inc 功能描述:M8805/100-007 |
| M8805/100-009 | 制造商:OTTO Engineering Inc 功能描述:M8805/100-009 |
| M8805/100-010 | 制造商:OTTO Engineering Inc 功能描述:M8805/100-010 |
| M8805/100-015 | 制造商:OTTO Engineering Inc 功能描述:M8805/100-015 |
| M8805/100-016 | 制造商:OTTO Engineering Inc 功能描述:M8805/100-016 |
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