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参数资料
| 型号： | M93C76-WDS6G |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, TSSOP-8 |
| 文件页数： | 8/38页 |
| 文件大小： | 348K |
| 代理商： | M93C76-WDS6G |
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Instructions
M93C86, M93C76, M93C66, M93C56, M93C46
5.4
Write
For the Write Data to Memory (WRITE) instruction, 8 or 16 data bits follow the op-code and
address bits. These form the byte or word that is to be written. As with the other bits, Serial
Data Input (D) is sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled, the Chip Select Input (S) must be taken low before
the next rising edge of Serial Clock (C). If Chip Select Input (S) is brought low before or after
this specific time frame, the self-timed programming cycle will not be started, and the
addressed location will not be programmed. The completion of the cycle can be detected by
monitoring the READY/BUSY line, as described later in this document.
Once the Write cycle has been started, it is internally self-timed (the external clock signal on
Serial Clock (C) may be stopped or left running after the start of a Write cycle). The cycle is
automatically preceded by an Erase cycle, so it is unnecessary to execute an explicit erase
instruction before a Write Data to Memory (WRITE) instruction.
Figure 5.
ERASE, ERAL sequences
1.
5.5
Erase All
The Erase All Memory (ERAL) instruction erases the whole memory (all memory bits are set
to 1). The format of the instruction requires that a dummy address be provided. The Erase
cycle is conducted in the same way as the Erase instruction (ERASE). The completion of
the cycle can be detected by monitoring the READY/BUSY line, as described in the
READY/BUSY status section.
AI00879B
S
ERASE
1 1
D
Q
ADDR
OP
CODE
1
BUSY
READY
CHECK
STATUS
S
ERASE
ALL
1
0
D
Q
OP
CODE
1
BUSY
READY
CHECK
STATUS
0
An
A0
Xn X0
ADDR
相关PDF资料 |
PDF描述 |
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| MLCP-65656V-100/883 | 32K X 8 STANDARD SRAM, 100 ns, CDIP28 |
| ML1I-65656L-80/883:D | 32K X 8 STANDARD SRAM, 80 ns, CDIP28 |
| MLCP-65656L-85 | 32K X 8 STANDARD SRAM, 85 ns, CDIP28 |
| MM1K-67132V-35:D | 2K X 8 DUAL-PORT SRAM, 35 ns, CDIP48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M93C-76WDS7P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C76-WMN3TP/S | 制造商:STMicroelectronics 功能描述:EEPROM Serial-Microwire 8K-bit 1K x 8/512 x 16 3.3V/5V 8-Pin SO N T/R |
| M93C76-WMN6 | 功能描述:电可擦除可编程只读存储器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93C-76WMN6P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C76-WMN6P | 功能描述:电可擦除可编程只读存储器 16 Kbit 8 Kbit 4Kbit 2 Kbit and 1 Kbit RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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