参数资料
型号: MA28139
厂商: Dynex Semiconductor Ltd.
英文描述: OBDH Bus Terminal
中文描述: OBDH客运站
文件页数: 22/34页
文件大小: 416K
代理商: MA28139
MA28139
22/34
CONNECTIONS TO THE OBDH I, R AND BT BUSSES
(SUGGESTED SCHEMES ONLY)
TRANSMITTER
Two OBDH bus driver schemes based on complementary and N-channel enhancement-mode FETs are shown.
Current-limiting and protection resistors may be employed to prevent damage under short-circuit.
Latching and/or non-latching relays may be used to provide isolation from the bus when a redundant circuit is unused or unpowered.
NPN and/or PNP bipolar junction transistors may also be employed in place of FETs.
Redundancy can be handled in channels (as shown) or by applying cross-strapping between the transformers and the drivers.
This implementation generates ‘active ground’ pulses where the transformer is shorted out (by conduction of the two lower FETs)
while the bus driver is enabled to reduce ringing, bus echoes, etc.
Using XR2 in place of XR3n and XR4 in place of XR1n will not cause ‘active zeros’ to be driven.
XR4
XR2
XR3n
XR1n
XR4
XR2
XR3n
XR1n
Figure 19: Conceptual OBDH Bus Driver Scheme
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