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参数资料
| 型号： | MA28139 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | OBDH Bus Terminal |
| 中文描述： | OBDH客运站 |
| 文件页数： | 26/34页 |
| 文件大小： | 416K |
| 代理商： | MA28139 |
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MA28139
26/34
No.
Parameter
Condition
Min.
Max.
Units
T24
LOSC
↓
to NIDS1n, NIDS2n, RIDS1n,
RIDS2n
↓
(hold max.)
LOSC
↓
to NIDS1n, NIDS2n, RIDS1n,
RIDS2n
↓
(setup max.)
LOSC
↑↓
to TIMEOUTn valid
Timeout period = 16
τ
LOSC
Redundant to Dual or Redundant to Nominal
bus changeover TIMEOUTn low reset period
=
τ
LOSC
CTU mode or RTU mode
10
-
ns
T25
CTU mode or RTU mode
15
-
ns
T26
CTU mode or RTU mode
-
55
ns
CTU mode or RTU mode
CTU mode or RTU mode
Guaranteed, not measured
Guaranteed, not measured
Table 6: Clock Detector Characterisation
No.
Parameter
Condition
Min.
Max.
Units
T27
T28
RIRCLK
↓
to BCP(1:4), BCPVAL valid
RIRCLK
↓
to MLADD(0:4)
RIRCLK
↓
to MLDATA
RIRCLK
↓
to CHADD
RIRCLK
↓
to MOSC, MOLC, MOHL, MOBT,
MODBL, MODS16, MODS8, MOANS,
MOAND valid
RIRCLK
↓
to IRCLK, CTCLK, TRCLK valid
RIRCLK
↓
to PC, ANCLK, SOC, SH valid
RIRCLK
↓
to DATARRT, ENRRT valid
ANSIN to RIRCLK
↑
setup
ANSIN to RIRCLK
↑
hold
NIDS1n, NIDS2n, RIDS1n, RIDS2n
↓
to
DATARRT, ENRRT
CTU mode
CTU mode
-
-
70
80
ns
ns
T29
T30
CTU mode
CTU mode
-
-
80
75
ns
ns
T31
CTU mode
-
70
ns
T32
CTU mode
-
70
ns
T33
T34
T35
CTU mode
CTU mode
RTU mode
-
-
0
70
55
-
ns
ns
ms
T35a
T36
RTU mode
RTU mode
30
-
-
ns
ns
75
Note 1:
RTU mode timing parameters not explicitly stated will be lower than the sum of the appropriate parameters for the
RTU Kernel, BAR1 and BAT2. Parameters T34 and T36 above may be used to estimate the difference in timing
between CTU mode (i.e. where the RTU Kernel, BAR1 and BAT2 are not coupled together) and RTU mode usage
(i.e. where those components are coupled together).
Note 2:
Configuration pins such as TA(0:5), EXTFMT, EXTMLA1 and EXTMLA2 and MRSTn are not considered here
because they do not need to be dynamically changed.
Note 3:
V
DD
= 5V
±
10% over full temperature range. V
OH
= V
OL
= V
DD
/2, V
IL
= V
SS
, V
IH
= V
DD
, C
L
= 50pF.
Note 4:
Total dose radiation not exceeding 10
5
Rads (Si).
Note 5:
Tables 4, 5, 6 & 7 contain Mil-Std-883, method 5005, subgroups 9, 10, 11.
Table 7: RTU Kernel Characterisation
Conditions
V
I
= 0V
V
I/O
= 0V
Min.
-
-
Typ.
3
5
Max.
5
7
Note 1: T
A
= 25C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Table 8: Capacitance
Units
pF
pF
Parameter
Input Capacitance
Output Capacitance
Symbol
C
IN
C
OUT
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