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参数资料
| 型号： | MA31755 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | 16-Bit Feedthrough Error Detection & Correction Unit EDAC |
| 中文描述： | 16位穿心错误检测 |
| 文件页数： | 7/13页 |
| 文件大小： | 134K |
| 代理商： | MA31755 |
MA31755
7/13
4. AC CHARACTERISTICS
5. DC CHARACTERISTICS AND RATINGS
Symbol
VDD
VI
TA
TS
Description
Supply voltage
Input voltage
Operating temperature
Storage temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
VDD+0.3
+125
+150
Units
V
V
oC
oC
Note:
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or
at any other condition above those indicated in the
operations section of this specification, is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Figure 11: Absolute Maximum Ratings
Conditions VDD = 4.5 to 5.5V, TA = -55 to +125
°
C
Mil-Std-883, method 5005, subgroups 1, 2, 3
Note 1: Worst case at TA = +125
°
C, guaranteed but not tested at TA = -55
°
C.
Parameter
T1
T2
T3
T4
Description
Min
-
-
-
-
Max
25
30
35
40
Units
ns
ns
ns
ns
Notes
CL = 150pF
CL = 50pF
CL = 50pF
CL = 50pF
PD[0:16] to MD[0:16] , CB[0:5] valid
MD[0:16] to PD[0:16] valid
CB[0:5] to PD[0:16] valid
MD[0:16] to CERRN and NCERRN valid
CB[0:5] to CERRN and NCERRN valid
RDWN, CS0 rising to PD[0:16] driven (processor read)
CS1N, CS2N falling to PD[0:16] driven (processor read)
CS0 rising to error flags changing
CS1N, CS2N falling to error flags changing
RDWN, CS0 falling to PD[0:16] Hi-Z
CS1N,CS2N rising to PD[0:16] Hi-Z
CS0 falling to error flags high
CS1N, CS2N rising to error flags high
RDWN, CS1N and CS2N falling to MD[0:16] and CB[0:5]
driven (processor write)
CS0 rising to MD[0:16] and CB[0:5] driven (processor
write)
CS0 falling to MD[0:16] and CB[0:5] Hi-Z
RDWN, CS1N, CS2N rising to MD[0:16] and CB[0:5] Hi-Z
ENFLG to CERRN and NCERRN valid
ENCOR to PD[0:16] valid
XERRN to NCERRN valid
Mil-Std-883, method 5005, subgroups 9, 10, 11
T5
5
20
ns
CL = 50pF
T6
-
25
ns
CL = 50pF
T7
-
30
ns
CL = 50pF
T8
-
25
ns
CL = 50pF
T9
5
20
ns
CL = 150pF
T10
5
25
ns
CL = 150pF
T11
T12
T13
-
-
-
20
20
10
ns
ns
ns
CL = 50pF
CL = 50pF
CL = 50pF
Figure 10: Timing Parameters
Parameter
VOH
Description
Output high voltage
Min
Vdd- 0.5
Max
-
Unit
V
Notes
IOH = 15mA on MD[0:16] / CB[0:5]
IOH = 5mA on other outputs.
IOL = -15mA on MD[0:16] / CB[0:5]
IOL = -5mA on other outputs.
VOL
Output low voltage
-
Vss+0.5
V
VIH
VIL
IIL, IIH (Note 1)
IOZ (Note 1)
ISS
IDD
Input high voltage
Input low voltage
Input current high/low
Output tri-state leakage
Standby current
Operating current
Vdd-1.5
-
-
-
-
-
-
Vss+1.5
10
0.1
10
100
V
V
uA
mA
mA
mA
VO = 0 to VDD
Figure 12: Operating Electrical Characteristics
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