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参数资料
| 型号： | MA7001 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation Hard 512x9 Bit FIFO |
| 中文描述： | 辐射硬512x9位的FIFO |
| 文件页数： | 1/15页 |
| 文件大小： | 144K |
| 代理商： | MA7001 |
MA7001
1/15
The MA7001 512 x 9 FIFO is manufactured using Dynex
Semiconductor's CMOS-SOS high performance, radiation
hard, 3
μ
m technology.
The Dynex Semiconductor Silicon-on-Sapphire process
provides significant advantages over bulk silicon substrate
technologies In addition to very good total dose hardness and
neutron hardness >10
15
n/cm
2
, the Dynex Semiconductor
technology provides very high transient gamma and single
event upset performance without compromising speed of
operation The Sapphire substrate also eliminates latch-up
giving greater flexibility of use in electrically severe
environments.
The MA7001 implements a First-ln First-Out algorithm that
reads and writes data on a first-in first-out basis. The dual-port
static RAM memory is organised as 512 words of 9 bits (8 bit
data and 1 bit for parity or control purposes).
Sequential read and write accesses are achieved using a
ring pointer architecture that requires no external addressing
information. Data is toggled in and out of the device by using
the WRITE (
W
) and READ (
R
) pins.
Full and Empty status flags prevent data overflow and
underflow. Expansion logic on the device allows for unlimited
expansion capability in both word size and depth. A
RETRANSMIT (
RT
) feature allows for reset of the read pointer
to its initial position to allow retransmission of data.
The device is designed for applications requiring
asynchronous and simultaneous read/write in multiprocessing
and rate buffering (sourcing and sinking data at different rates
eg. interfacing fast processors and slow peripherals).
FEATURES
I
Radiation Hard CMOS-SOS Technology
I
Fast Access Time 60ns Typical
I
Single 5V Supply
I
Inputs Fully TTL and CMOS Compatible
I
-55
°
C to +125
°
C Operation
Figure 1: Block Diagram
Radiation Hard 512x9 Bit FIFO
Replaces June 1999 version, DS3519-4.0
DS3519-5.0 January 2000
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