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参数资料
| 型号： | MA31755 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | 16-Bit Feedthrough Error Detection & Correction Unit EDAC |
| 中文描述： | 16位穿心错误检测 |
| 文件页数： | 8/13页 |
| 文件大小： | 134K |
| 代理商： | MA31755 |
MA31755
8/13
Subgroup
Definition
1
Static characteristics specified in Figure 12 at +25
°
C
2
Static characteristics specified in Figure 12 at +125
°
C
3
Static characteristics specified in Figure 12 at -55
°
C
7
Functional characteristics specified at +25
°
C
8A
Functional characteristics specified at +125
°
C
8B
Functional characteristics specified at -55
°
C
9
Switching characteristics specified in Figure 10 at +25
°
C
10
Switching characteristics specified in Figure 10 at +125
°
C
11
Switching characteristics specified in Figure 10 at -55
°
C
Figure 13: Definition of Subgroups
6. APPLICATIONS INFORMATION
Figure 14: Basic System Diagram for the MA31755 with the MA31750
MA31750
ABN
DPARN
DTON
ASTB
DSN
M/ION
R/WN
AS[0-3]
PS[0-3]
A[0-15]
D[0-16]
CLK
TCLK
CONREQN
RESETN
EXADEN
FLT7N
SYSFN
GND
G
ILLADN
INT02N
INT08N
INT10N
INT11N
INT13N
INT15N
IOI1N
IOI2N
INTAKN
NPU
L
MPROEN
PEN
O/IN
RDN
WRN
PB[0-3]
PWRDN
RDYN
R
SUREN
TGON
VDD
MA31755
ENPDN
ENMDN
CERRN
NCERRN
CS0
CB[0:5]
MD[0:16]
CS1N
RDWN
PD[0:16]
VDD0-3
VSS0-3
CONTROL
A[0-15]
PD[0:16]
ASTB
DSN
M/ION
RDWN
O/IN
RDN
WRN
MD[0:16]
CB[0:5]
RDWN
RDYN
CLK
TCLK
RESETN
To memory system
XERRN
XERRN
CS2N
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