参数资料
型号: MA4GP907-T
元件分类: PIN二极管
英文描述: GALLIUM ARSENIDE, PIN DIODE
封装: FLIP CHIP-2
文件页数: 1/4页
文件大小: 310K
代理商: MA4GP907-T
GaAs Flip-Chip PIN Diodes
V 5.00
Features
n
Low Series Resistance, 4
n
Ultra Low Capacitance, 25 fF
n
High Switching Cutoff Frequency, 40 GHz
n
2 Nanosecond Switching Speed
n
Can be Driven by Buffered TTL
n
Silicon Nitride Passivation
n
Polyimide Scratch Protection
Description
M/A-COM's MA4GP907 is a Gallium Arsenide Flip-Chip PIN
diode.These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device uniformity and
extremely low parasitics. The diodes exhibit an extremely low
RC Product, ( 0.1 ps ) and 2 nS switching characteristics. They
are fully passivated with silicon nitride and have an additional
layer of a polymer for scratch protection.The protective
coatings prevent damage to the junction and the anode
airbridge during handling.
Applications
The 25 fF capacitance of the MA4GP907 allows use through
mmwave switch and switched phase shifter applications. This
diode is designed for use in pulsed or CW applications, where
single digit nS switching speed is required. For surface mount
assembly, the low capacitance of the MA4GP907 makes it
ideal for use in microwave multithrow switch assemblies,
where the series capacitance of each “off” port adversely loads
the input and affects VSWR.
MA4GP907
Package Outline
Top View Is Shown With Diode Junction Up
1
Cathode
Ordering Information
Part Number
Packaging
MA4GP907
Die in Carrier
MA4GP907-T
Tape/Reel
MA4GP907-W
Wafer on Frame
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