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参数资料
| 型号： | MA4GP907-T |
| 元件分类： | PIN二极管 |
| 英文描述： | GALLIUM ARSENIDE, PIN DIODE |
| 封装： | FLIP CHIP-2 |
| 文件页数： | 2/4页 |
| 文件大小： | 310K |
| 代理商： | MA4GP907-T |
GaAs Flip-Chip PIN Diodes
MA4GP907
V5.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
2
Electrical Specifications and RF Data @TA = 25 °C
Parameters and Test Conditions
Symbol
Units
1 MHz & DC
Specifications
Min.
Typ.
Max.
Min.
Typ.
Max.
Total Capacitance at -10 V
Ct
pF
0.025
0.030
0.025
Forward Resistance at +10mA
Rs
Ohms
4.2
Forward Voltage at +10mA
Vf
Volts
1.33
1.45
Reverse Breakdown Voltage at -10uA
3
Vb
Volts
-50
-45
Switching Speed (10 to 90% RF Voltage)
4
& (90 to 10% RF Voltage)
4
Trise
Tfall
nS
2
10 GHz Reference
Data
1,2
1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz.
2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line
at 10 GHz.
3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.
4. Switching speed is measured between 10% and 90% or 90% to 10% RF Voltage for a Single Series Mounted Diode.
Driver delay is Not included.
Notes:
Single Series Diode Insertion Loss vs Frequency
-0.8
-0.6
-0.4
-0.2
0.0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
Insertion
Loss
(dB)
I. Loss @5mA
I. Loss @15mA
I. Loss @50mA
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