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参数资料
| 型号： | MA5114 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation hard 1024x4 Bit Static RAM |
| 中文描述： | 辐射硬1024x4位静态RAM |
| 文件页数： | 6/12页 |
| 文件大小： | 115K |
| 代理商： | MA5114 |
MA5114
6/12
Figure 12: Write Cycle
ADDRESS
T
AVAVW
T
AVWH
T
AVWL
T
WLWH (2)
T
WHAV (3)
T
ELWL
(7)
(4)
T
WLQZ
WE
T
AXQX
T
WLQH
DATA OUT
(5)
(6)
HIGH
IMPEDANCE
DATA VALID
DATA IN
T
DVWH
T
WHDX
T
ELWH
CS
1.
WE
must be high during all address transitions.
2. A write occurs during the overlap (T
WLWH
) of a low
CS
and a low
WE
.
3. T
WHAV
is measured from either
CS
or
WE
going high, whichever is the earlier, to the end of the write cycle.
4. If the
CS
low transition occurs simultaneously with, or after, the
WE
low transition, the output remains in
the high impedance state.
5. DATA OUT is in the active state, so DATA IN must not be in opposing state.
6. DATA OUT is the write data of the current cycle, if selected.
7. DATA OUT is the read data of the next address, if selected.
8. T
ELWL
must be met to prevent memory corruption.
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