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参数资料
| 型号： | MAPLST2122-002PP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | PFP-16 |
| 文件页数： | 1/5页 |
| 文件大小： | 141K |
| 代理商： | MAPLST2122-002PP |
RF Power Field Effect Transistor
LDMOS, 2110—2170 MHz, 2W, 28V
Designed for broadband commercial
applications up to 2.2GHz
High Gain, High Efficiency and High
Linearity
Ease of Design for Gain and Insertion Phase
Flatness
Excellent Thermal Stability
W-CDMA Performance at 2.17GHz, 28Vdc
Average Output Power: 27dBm @ -45dBc
ACPR
Gain: 14.5dB (typ.)
Efficiency: 20% (typ.)
10:1 VSWR Ruggedness at 2W (CW), 28V,
2.11GHz)
MAPLST2122-002PP
Package Style
7/9/04
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
V
DSS
65
Vdc
Gate—Source Voltage
V
GS
+15, -0.5
Vdc
Total Power Dissipation @ TC = 25 °C
P
D
6.9
W
Storage Temperature
T
STG
-65 to +150
°C
Junction Temperature
T
J
150
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
18
Unit
C/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.
PFP-16
Features
相关PDF资料 |
PDF描述 |
|---|---|
| MAPLST2122-015CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-030WF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-060WF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-030CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-090CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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