- 您现在的位置：买卖IC网 > PDF目录95877 > MAPLST2122-002PP S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MAPLST2122-002PP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | PFP-16 |
| 文件页数： | 2/5页 |
| 文件大小： | 141K |
| 代理商： | MAPLST2122-002PP |
RF Power LDMOS Transistor, 2110-2170 MHz, 2W, 28V
MAPLST2122-002PP
7/9/04
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 30 Adc)
V(BR)DSS
65
—
Vdc
Gate Threshold Voltage
(Vds = 26 Vdc, Id = 25 mA)
VGS(th)
2
—
5
Vdc
Gate Quiescent Voltage
(Vds = 26 Vdc, Id = 25 mA)
VGS(Q)
3
—
5
Vdc
Drain-Source On-Voltage
(Vgs = 10 Vdc, Id = 0.1 A)
VDS(on)
—
0.30
—
Vdc
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) (1)
Common Source Amplifier Gain
(VDD = 28 Vdc, IDQ = 35 mA, f = 2.17 GHz, POUT = 2 W)
GP
—
14.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, IDQ = 35 mA, f = 2.17 GHz, POUT = 2 W)
EFF ()
—
38
—
%
Input Return Loss
(VDD = 28 Vdc, IDQ = 35 mA, f = 2.17 GHz, POUT = 2 W)
IRL
—
-9
—
dB
Output VSWR Tolerance
(VDD = 28 Vdc, IDQ = 35 mA, f = 2.17 GHz, POUT = 2 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Device specifications obtained on a Production Test Fixture.
2
相关PDF资料 |
PDF描述 |
|---|---|
| MAPLST2122-015CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-030WF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-060WF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-030CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-090CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。