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| 型号： | MAPRST0912-50 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件页数： | 2/4页 |
| 文件大小： | 150K |
| 代理商： | MAPRST0912-50 |
Avionics Pulsed Power Transistor
50W, 960-1215 MHz, 10s Pulse, 10% Duty
MAPRST0912-50
M/A-COM Products
Released, 05 Sep 07
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Gain vs. Frequency
Typical RF Performance
Freq.
(MHz)
Pin
(W)
Pout
(W)
Gain
(dB)
ΔGain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(10:1)
P1dB Overdrive
Pout
Δ Po
960
6.2
65.9
10.25
-
2.66
49.6
-22.2
S
P
73.4
0.48
1090
6.2
61.9
9.98
2.58
48.0
-15.2
S
-
68.7
0.45
1215
6.2
64.6
10.16
2.50
51.6
-15.9
S
-
74.8
0.63
-
0.35
Note:
ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 6.2W.
Collector Efficiency vs. Frequency
8.4
8.8
9.2
9.6
10.0
10.4
950
1050
1150
1250
Freq (M Hz)
G
ain
(
d
B
)
30
36
42
48
54
60
950
1050
1150
1250
Freq (M Hz)
E
ff
ici
en
cy
(
%
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPRST1030-1KS | 功能描述:射频MOSFET电源晶体管 1030MHz 1000W Gain: 8.0dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MAPRST1214-030UF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RADAR PULSED POWER TRANSISTOR |
| MAPRST1214-150UF | 功能描述:射频MOSFET电源晶体管 1.2-1.4GHz 150W Gain: 7.4dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MAPRST1214-150UF_07 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 150W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty |
| MAPRST1214-30UF | 功能描述:射频MOSFET电源晶体管 1.2-1.4GHz 30W Gain:7.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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