- 您现在的位置：买卖IC网 > PDF目录97599 > MAPRST0912-50 L BAND, Si, NPN, RF POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MAPRST0912-50 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 150K |
| 代理商： | MAPRST0912-50 |
Avionics Pulsed Power Transistor
50W, 960-1215 MHz, 10s Pulse, 10% Duty
MAPRST0912-50
M/A-COM Products
Released, 05 Sep 07
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
RF Power Transfer Curve
(Output Power Vs. Input Power)
Broadband Test Fixture Impedance
F (MHz)
ZIF ()
ZOF ()
960
3.5 - j7.5
12.0 - j7.8
1030
3.8 - j7.0
11.1 - j6.4
1090
3.9 - j6.8
10.6 - j5.1
1150
3.9 - j6.8
10.8 - j3.8
1215
3.6 - j7.0
11.1 - j3.2
40
50
60
70
80
4.5
5.5
6.5
7.5
8.5
Pin (watts)
Po
u
t(
w
at
ts
)
960 MHz
1090 MHz
1215 MHz
相关PDF资料 |
PDF描述 |
|---|---|
| MAT-01GH/883 | 25 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT03-903H | SMALL SIGNAL TRANSISTOR |
| MAT03-913L | SMALL SIGNAL TRANSISTOR |
| MAT03-913H | SMALL SIGNAL TRANSISTOR |
| MAT03-903L | SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPRST1030-1KS | 功能描述:射频MOSFET电源晶体管 1030MHz 1000W Gain: 8.0dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MAPRST1214-030UF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RADAR PULSED POWER TRANSISTOR |
| MAPRST1214-150UF | 功能描述:射频MOSFET电源晶体管 1.2-1.4GHz 150W Gain: 7.4dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MAPRST1214-150UF_07 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 150W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty |
| MAPRST1214-30UF | 功能描述:射频MOSFET电源晶体管 1.2-1.4GHz 30W Gain:7.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。