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参数资料
| 型号： | MAT-01GH |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件页数： | 1/8页 |
| 文件大小： | 873K |
| 代理商： | MAT-01GH |
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
Matched Monolithic
Dual Transistor
MAT01
FEATURES
Low VOS (VBE Match): 40
V typ, 100
V max
Low TCVOS: 0.5
V/ C max
High hFE: 500 min
Excellent hFE Linearity from 10 nA to 10 mA
Low Noise Voltage: 0.23
V p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40
V, tem-
perature drift of 0.15
V/°C, and hFE matching of 0.7%. Very
high hFE is provided over a six decade range of collector current,
including an exceptional hFE of 590 at a collector current of only
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
PIN CONNECTION
TO-78
(H Suffix)
NOTE: Substrate is connected to case.
BURN-IN CIRCUIT
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
Analog Devices, Inc., 2002
相关PDF资料 |
PDF描述 |
|---|---|
| MAT-01N | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MAT-01NACG | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MAT-01NBC | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MAT-01NBCG | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MAT-01N | 25 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAT01GH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT01GHZ | 功能描述:TRANS MATCHED MONO DUAL TO-78-6 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT01N | 制造商:AD 制造商全称:Analog Devices 功能描述:Matched Monolithic Dual Transistor |
| MAT02 | 制造商:AD 制造商全称:Analog Devices 功能描述:Low Noise, Matched Dual Monolithic Transistor |
| MAT020903H | 制造商:Analog Devices 功能描述:MATCHED MONOLITHE TRANSISTOR - Rail/Tube |
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