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参数资料
| 型号： | MAT-01GH |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件页数： | 4/8页 |
| 文件大小： | 873K |
| 代理商： | MAT-01GH |
MAT01
–4–
REV. B
ABSOLUTE MAXIMUM RATINGS
1
Collector-Base Voltage (BVCBO)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Emitter Voltage (BVCEO)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Collector Voltage (BVCC)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Emitter Voltage (BVEE)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Base Voltage (BVEBO)
2
. . . . . . . . . . . . . . . . . . . . . 5 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . .25 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
Total Power Dissipation
Case Temperature
≤ 40°C3 . . . . . . . . . . . . . . . . . . . . 1.8 W
Ambient Temperature
≤ 70°C4 . . . . . . . . . . . . . . . 500 mW
Operating Ambient Temperature . . . . . . . . . –55
°C to +125°C
Operating Junction Temperature . . . . . . . . . –55
°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300
°C
DICE Junction Temperature . . . . . . . . . . . . –65
°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to measure
BVEBO greater than the 5 V rating shown.
3Rating applies to applications using heat sinking to control case temperature.
Derate linearity at 16.4 mW/
°C for case temperatures above 40°C.
4Rating applies to applications not using heat sinking; device in free air only. Derate
linearity at 6.3 mW/
°C for ambient temperatures above 70°C.
ORDERING GUIDE
1
VOS max
Temperature
Package
Model
(TA = 25 C)
Range
Option
MAT01AH
2
0.1 mV
–55
°C to +125°C TO-78
MAT01GH
0.5 mV
–55
°C to +125°C TO-78
NOTES
1Burn-in is available on commercial and industrial temperature range parts in
TO-can packages.
2For devices processed in total compliance to MIL-STD-883, add/883 after part
number. Consult factory for 883 data sheet.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT01 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
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| MAT-01N | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MAT-01NACG | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MAT-01NBC | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
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| MAT-01N | 25 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAT01GH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT01GHZ | 功能描述:TRANS MATCHED MONO DUAL TO-78-6 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT01N | 制造商:AD 制造商全称:Analog Devices 功能描述:Matched Monolithic Dual Transistor |
| MAT02 | 制造商:AD 制造商全称:Analog Devices 功能描述:Low Noise, Matched Dual Monolithic Transistor |
| MAT020903H | 制造商:Analog Devices 功能描述:MATCHED MONOLITHE TRANSISTOR - Rail/Tube |
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