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参数资料
| 型号： | MAT-01GH |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件页数： | 2/8页 |
| 文件大小： | 873K |
| 代理商： | MAT-01GH |
REV. B
–2–
MAT01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ V
CB = 15 V, IC = 10
A, TA = 25 C, unless otherwise noted.)
MAT01AH
MAT01GH
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Min
Unit
Breakdown Voltage
BVCEO
IC = 100
A45
45
V
Offset Voltage
VOS
0.04
0.1
0.10
0.5
mV
Offset Voltage Stability
First Month
VOS/Time
(Note 1)
2.0
V/Mo
Long Term
(Note 2)
0.2
V/Mo
Offset Current
IOS
0.1
0.6
0.2
3.2
nA
Bias Current
IB
13
20
18
40
nA
Current Gain
hFE
IC = 10 nA
590
430
IC = 10
A
500
770
250
560
IC = 10 mA
840
610
Current Gain Match
hFE
IC = 10
A
0.7
3.0
1.0
8.0
%
100 nA
≤ I
C
≤ 10 mA
0.8
1.2
%
Low Frequency Noise
Voltage
en p-p
0.1 Hz to 10 Hz
3
0.23
0.4
0.23
0.4
V p-p
Broadband Noise
Voltage
en rms
1 Hz to 10 kHz
0.60
V rms
Noise Voltage
Density
en
fO = 10 Hz
3
7.0
9.0
7.0
9.0
nV/
√Hz
fO = 100 Hz
3
6.1
7.6
6.1
7.6
nV/
√Hz
fO = 1000 Hz
3
6.0
7.5
6.0
7.5
nV/
√Hz
Offset Voltage Change
V
OS/
V
CB
0
≤ V
CB
≤ 30 V
0.5
3.0
0.8
8.0
V/V
Offset Current Change
IOS/VCB
0
≤ VCB ≤ 30 V
2
15
3
70
pA/V
Collector-Base
Leakage Current
ICBO
VCB = 30 V, IE = 0
4
15
50
25
200
pA
Collector-Emitter
Leakage Current
ICES
VCE = 30 V, VBE = 0
4, 5
50
200
90
400
pA
Collector-Collector
Leakage Current
ICC
VCC = 30 V
5
20
200
30
400
pA
Collector Saturation
VCE(SAT)
IB = 0.1 mA, IC = 1 mA
0.12
0.20
0.12
0.25
V
Voltage
IB = 1 mA, IC = 10 mA
0.8
V
Gain-Bandwidth Product
fT
VCE = 10 V, IC = 10 mA
450
MHz
Output Capacitance
COB
VCB = 15 V, IE = 0
2.8
pF
Collector-Collector
Capacitance
CCC
VCC = 0
8.5
pF
ELECTRICAL CHARACTERISTICS
MAT01AH
MAT01GH
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Min
Unit
Offset Voltage
VOS
0.06
0.15
0.14
0.70
mV
Average Offset
Voltage Drift
TCVOS
(Note 6)
0.15
0.50
0.35
1.8
V/°C
Offset Current
IOS
0.9
8.0
1.5
15.0
nA
Average Offset
Current Drift
TCIOS
(Note 7)
10
90
15
150
pA/
°C
Bias Current
ΙΒ
28
60
36
130
nA
Current Gain
hFE
167
400
77
300
Collector-Base
ICBO
TA = 125
°C, VCB = 30 V,
Leakage Current
IE = 0
4
15
80
25
200
nA
Collector-Emitter
ICES
TA = 125
°C, VCE = 30 V,
Leakage Current
VBE = 0
4, 6
50
300
90
400
nA
Collector-Collector
ICC
TA = 125
°C, V
CC = 30 V,
Leakage Current
(Note 6)
30
200
50
400
nA
(@ VCB = 15 V, IC = 10 A, –55 C
≤ TA ≤ +125 C, unless otherwise noted.)
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| MAT-01N | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAT01GH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT01GHZ | 功能描述:TRANS MATCHED MONO DUAL TO-78-6 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT01N | 制造商:AD 制造商全称:Analog Devices 功能描述:Matched Monolithic Dual Transistor |
| MAT02 | 制造商:AD 制造商全称:Analog Devices 功能描述:Low Noise, Matched Dual Monolithic Transistor |
| MAT020903H | 制造商:Analog Devices 功能描述:MATCHED MONOLITHE TRANSISTOR - Rail/Tube |
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