参数资料
型号: MAX1415AEWE+T
厂商: Maxim Integrated Products
文件页数: 12/36页
文件大小: 0K
描述: IC ADC 16BIT DELTA SIGMA 16-SOIC
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1,000
位数: 16
采样率(每秒): 500
数据接口: MICROWIRE?,QSPI?,串行,SPI?
转换器数目: 1
功率耗散(最大): 762mW
电压电源: 单电源
工作温度: -45°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 带卷 (TR)
输入数目和类型: 2 个差分,单极;2 个差分,双极
MAX1415/MAX1416
16-Bit, Low-Power, 2-Channel,
Sigma-Delta ADCs
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS—MAX1415
(VDD = 3V, GND = 0, VREF+ = 1.225V, VREF- = GND, external fCLKIN = 2.4576MHz, CLKDIV bit = 0, CREF+ to GND = 0.1F, CREF- to
GND = 0.1F, TA = TMIN to TMAX, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to GND ..............................................................-0.3V to +6V
All Other Pins to GND.................................-0.3V to (VDD + 0.3V)
Maximum Current Input into Any Pin ..................................50mA
Continuous Power Dissipation (TA = +70
°C)
16-Pin PDIP (derate 10.5mW/
°C above +70°C)...........842mW
16-Pin TSSOP (derate 9.4mW/
°C above +70°C) .........755mW
16-Pin Wide SO (derate 9.5mW/
°C above +70°C) ......762mW
Operating Temperature Range ..........................-40
°C to +85°C
Storage Temperature Range .............................-60
°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300
°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC ACCURACY
Resolution (No Missing Codes)
16
Bits
Output Noise
(Tables 1, 3)
V
Integral Nonlinearity
INL
Gain = 1, bipolar mode, unbuffered
±0.0015 %FSR
Unipolar Offset Error
After calibration
(Note 1)
V
Unipolar Offset Drift
(Note 2)
0.5
V/°C
Bipolar Zero Error
After calibration
(Note 1)
V
Gain = 1 to 4
0.5
Bipolar Zero Drift (Note 2)
Gain = 8 to 128
0.1
V/°C
Positive Full-Scale Error
After calibration
(Notes 1, 3)
V
Full-Scale Drift
(Notes 2, 4)
0.5
V/°C
Gain Error
After calibration
(Notes 1, 5)
V
Gain Drift
(Notes 2, 6)
0.5
ppm of
FSR/°C
Bipolar Negative Full-Scale Error
After calibration
±0.003
%FSR
Gain = 1 to 4
1
Bipolar Negative Full-Scale Drift
(Note 2)
Gain = 8 to 128
0.6
V/°C
ANALOG INPUTS (AIN1+, AIN1-, AIN2+, AIN2-)
Unipolar input range
0
VREF /
GAIN
AIN Differential Input Voltage
Range (Note 7)
Bipolar input range
-VREF /
GAIN
VREF /
GAIN
V
Unbuffered
GND -
30mV
VDD +
30mV
AIN Absolute Input Voltage
Range (Note 8)
Buffered
GND +
50mV
VDD -
1.5V
V
AIN DC Leakage Current
Unselected input channel
1
nA
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