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参数资料
| 型号： | MAX15041ETE+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/18页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 3A 16TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.6 V ~ 25.2 V |
| 输入电压： | 4.5 V ~ 28 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 350kHz |
| 电流 - 输出： | 3A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
| 供应商设备封装： | 16-TQFN-EP（3x3） |
Low-Cost, 3A, 4.5V to 28V Input, 350kHz, PWM
Step-Down DC-DC Regulator with Internal Switches
ABSOLUTE MAXIMUM RATINGS
IN to SGND.............................................................-0.3V to +30V
EN to SGND .................................................-0.3V to (V IN + 0.3V)
LX to PGND ................................-0.3V to min (+30V, V IN + 0.3V)
LX to PGND .....................-1V to min (+30V, V IN + 0.3V) for 50ns
PGOOD to SGND .....................................................-0.3V to +6V
V DD to SGND............................................................-0.3V to +6V
COMP, FB, SS to SGND..............-0.3V to min (+6V, V DD + 0.3V)
BST to LX .................................................................-0.3V to +6V
BST to SGND .........................................................-0.3V to +36V
SGND to PGND ....................................................-0.3V to +0.3V
LX Current (Note 1) ....................................................-5A to +8A
Converter Output Short-Circuit Duration ...................Continuous
Continuous Power Dissipation (T A = +70°C)
16-Pin TQFN (derate 14.7mW/°C above +70°C)
Multilayer Board .........................................................1666mW
Operating Temperature Range ..........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range ............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Note 1: LX has internal clamp diodes to PGND and IN. Applications that forward bias these diodes should take care not to exceed
the IC’s package power dissipation.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 2)
16 TQFN-EP
Junction-to-Ambient Thermal Resistance ( θ JA ).........+48°C/W
Junction-to-Case Thermal Resistance ( θ JC ) ...............+7°C/W
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V IN = 12V, C VDD = 1μF, C IN = 22μF, T A = T J = -40°C to +85°C, typical values are at T A = +25°C, unless otherwise noted.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
STEP-DOWN CONVERTER
Input-Voltage Range
V IN
4.5
28
V
Quiescent Current
Shutdown Input Supply Current
I IN
Not switching
V EN = 0V, V DD regulated by internal
LDO
2.1
2
4
12
mA
μA
ENABLE INPUT
V EN = 0V, V IN = V DD = 5V
18
28
EN Shutdown Threshold Voltage
EN Shutdown Voltage Hysteresis
V EN_SHDN
V EN_HYST
V EN rising
1.4
100
V
mV
EN Lockout Threshold Voltage
EN Input Current
V EN_LOCK
V EN_LOCK_HYST
I EN
V EN rising
V EN = 2.9V
1.7
2
1.95
100
5.3
2.15
9
V
mV
μA
POWER-GOOD OUTPUT
PGOOD Threshold
V PGOOD_TH
V FB rising
540
560
584
mV
PGOOD Threshold Hysteresis
V PGOOD_HYST
15
mV
PGOOD Output Low Voltage
PGOOD Leakage Current
V PGOOD_OL
I PGOOD
I PGOOD = 5mA, V FB = 0.5V
V PGOOD = 5V, V FB = 0.7V
35
10
100
mV
nA
ERROR AMPLIFIER
Error Amplifier
Transconductance
Error Amplifier Voltage Gain
g MV
A VEA
1.6
90
mS
dB
FB Set-Point Accuracy
V FB
600
606
612
mV
2
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