参数资料
型号: MAX16816ATJ+T
厂商: Maxim Integrated
文件页数: 20/33页
文件大小: 0K
描述: IC LED DRIVR HIGH BRIGHT 32-TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
拓扑: PWM,SEPIC,降压(降压),升压(升压)
输出数: 1
内部驱动器:
类型 - 主要: 车载
类型 - 次要: 高亮度 LED(HBLED)
频率: 125kHz ~ 500kHz
电源电压: 5.5 V ~ 76 V
安装类型: 表面贴装
封装/外壳: 32-WFQFN 裸露焊盘
供应商设备封装: 32-TQFN-EP(5x5)
包装: 带卷 (TR)
工作温度: -40°C ~ 125°C
Programmable Switch-Mode LED Driver
with Analog-Controlled PWM Dimming
Binning Adjustment Register (BIN)
The MAX16816 uses a feedback loop to control the
load current. The differential voltage across the current-
sense resistor, R CS , is compared with an internal
adjustable reference to regulate the LED current. The
voltage across the sense resistor is measured differen-
tially to achieve high immunity to common-mode noise.
The MAX16816 includes a factory-set regulation volt-
age of 133mV ±3% across R CS . Adjust the differential
regulation voltage by programming the binning adjust-
ment register (see Table 3). The reference voltage level
may not necessarily be equal to the regulation voltage.
There are offsets involved that are trimmed at the facto-
ry. Read the default register code and step up the code
by one to increase the regulation voltage by 6.66mV.
Adjust REG2 by programming the REG2 Control
Register. See Table 4.
Blanking Time Adjustment Register (BLNK)
The MAX16816 features a programmable blanking time
to mask out the current-sense signal for a short dura-
tion to avoid the ILIM and HICCUP comparators from
prematurely terminating the on-cycle of the switching
MOSFET. This blanking time allows for higher input cur-
rent during startup without triggering a fault condition.
The blanking time is adjustable in the range of 150ns to
75ns by configuring the EEPROM. See Table 5.
Table 4. REG2 Control Register
Step down the code by one to reduce the regulation
voltage by 6.66mV.
REG2 OUTPUT
VOLTAGE
EEPROM ADDRESS
REG2 Control Register (DRPS)
REG2 is EEPROM configurable to supply a voltage rang-
ing from 5V to 15V and is capable of sourcing up to
20mA. Connect REG2 to the primary switching MOSFET
gate-driver supply input, DRI, for normal operation.
Table 3. Binning Adjustment Register
(V)
5.000
5.667
6.333
7.000*
7.667
8.333
9.000
2Bh
0
0
0
0
0
0
0
2Ah
0
0
0
0
1
1
1
29h
0
0
1
1
0
0
1
28h
0
1
0
1
0
1
0
REFERENCE
EEPROM ADDRESS
9.667
0
1
1
1
VOLTAGE LEVEL
(mV)
100.00
106.67
113.33
120.00
126.67
133.33
140.00
146.67
27h
0
0
0
0
0
0
0
0
26h
0
0
0
0
1
1
1
1
25h
0
0
1
1
0
0
1
1
24h
0
1
0
1
0
1
0
1
10.333
11.000
11.667
12.333
13.000
13.667
14.333
15.000
*Factory default
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
153.33
1
0
0
0
160.00
1
0
0
1
Table 5. Blanking Time
166.67
1
0
1
0
BLANKING TIME
EEPROM ADDRESS
173.33*
180.00*
186.67*
193.33*
200.00*
1
1
1
1
1
0
1
1
1
1
1
0
0
1
1
1
0
1
0
1
(ns)
150*
125
100
75
33h
0
0
1
1
32h
0
1
0
1
*Not recommended
*Factory default
20
______________________________________________________________________________________
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