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| 型号： | MAX17004ETJ+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 23/36页 |
| 文件大小： | 0K |
| 描述： | IC PS CTRLR FOR NOTEBOOKS 32TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 控制器，笔记本电脑电源系统 |
| 输入电压： | 6 V ~ 26 V |
| 输出数： | 4 |
| 输出电压： | 3.3V，5V，2 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-WFQFN 裸露焊盘 |
| 供应商设备封装： | 32-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
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High-Efficiency, Quad-Output, Main Power-
Supply Controllers for Notebook Computers
V GS ( TH ) > V IN ? RSS ?
maximum load current is less than the peak current-
limit threshold by an amount equal to half of the induc-
tor ripple current. Therefore, the maximum load
capability is a function of the current-sense resistance,
inductor value, switching frequency, and duty cycle
(V OUT /V IN ).
In forced-PWM mode, the MAX17003/MAX17004 also
implement a negative current limit to prevent excessive
reverse inductor currents when V OUT is sinking current.
The negative current-limit threshold is set to approxi-
mately 120% of the positive current limit and tracks the
positive current limit when ILIM is adjusted.
Connect ILIM to LDO5 for the 50mV default threshold,
or adjust the current-limit threshold with an external
resistor-divider at ILIM. Use a 2μA to 20μA divider cur-
rent for accuracy and noise immunity. The current-limit
threshold adjustment range is from 50mV to 200mV. In
the adjustable mode, the current-limit threshold voltage
equals precisely 1/10th the voltage seen at ILIM. The
logic threshold for switchover to the default value is
approximately V LDO5 - 1V.
Carefully observe the PCB layout guidelines to ensure
that noise and DC errors do not corrupt the differential
current-sense signals seen by CSH_ and CSL_. Place
the IC close to the sense resistor with short, direct
traces, making a Kelvin-sense connection to the cur-
rent-sense resistor.
MOSFET Gate Drivers (DH_, DL_)
The DH_ and DL_ drivers are optimized for driving
moderate-sized high-side and larger low-side power
interprets the MOSFET gates as “off” while charge actu-
ally remains. Use very short, wide traces (50 mils to 100
mils wide if the MOSFET is 1in from the driver).
The internal pulldown transistor that drives DL_ low is
robust, with a 0.6 Ω (typ) on-resistance. This helps prevent
DL_ from being pulled up due to capacitive coupling from
the drain to the gate of the low-side MOSFETs when the
inductor node (LX_) quickly switches from ground to V IN .
Applications with high input voltages and long inductive
driver traces may require additional gate-to-source
capacitance to ensure fast-rising LX_ edges do not pull
up the low-side MOSFETs gate, causing shoot-through
currents. The capacitive coupling between LX_ and DL_
created by the MOSFET’s gate-to-drain capacitance
(C GD = C RSS ), gate-to-source capacitance (C GS = C ISS
- C GD ), and additional board parasitics should not
exceed the following minimum threshold:
? C ?
? C ISS ?
Lot-to-lot variation of the threshold voltage may cause
problems in marginal designs.
Power-Good Output (PGDALL)
PGDALL is the open-drain output of a comparator that
continuously monitors both SMPS output voltages for
undervoltage conditions. PGDALL is actively held low
in shutdown ( SHDN = GND), during soft-start, and soft-
shutdown, and when either SMPS is disabled (either
MOSFETs. This is consistent with the low duty factor
seen in notebook applications, where a large V IN -
V OUT differential exists. The high-side gate drivers
POWER-GOOD
FAULT
PROTECTION
(DH_) source and sink 2A, and the low-side gate dri-
vers (DL_) source 1.7A and sink 3.3A. This ensures
0.9 x INT REF_
0.7 x INT REF_
1.11 x INT REF_
INTERNAL FB
robust gate drive for high-current applications. The
DH_ floating high-side MOSFET drivers are powered by
charge pumps at BST_ while the DL_ synchronous-rec-
tifier drivers are powered directly by the fixed 5V linear
regulator (LDO5).
Adaptive dead-time circuits monitor the DL_ and DH_
drivers and prevent either FET from turning on until the
ENABLE OVP
ENABLE UVP
other is fully off. The adaptive driver dead-time allows
operation without shoot-through with a wide range of
6144
CLK
FAULT
LATCH
FAULT
MOSFETs, minimizing delays and maintaining efficiency.
There must be a low-resistance, low-inductance path
POR
POWER-GOOD
from the DL_ and DH_ drivers to the MOSFET gates for
the adaptive dead-time circuits to work properly; other-
wise, the sense circuitry in the MAX17003/MAX17004
Figure 6. Power-Good and Fault Protection
______________________________________________________________________________________
23
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX17005AETP+ | 功能描述:电池管理 1.2MHz High-Perf Charger RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17005AETP+T | 功能描述:电池管理 1.2MHz High-Perf Charger RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17005BETP+ | 功能描述:电池管理 1.2MHz High-Perf Charger RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17005BETP+T | 功能描述:电池管理 1.2MHz High-Perf Charger RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17005DEVKIT+ | 功能描述:电源管理IC开发工具 Programmers, Development Systems RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
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