- 您现在的位置：买卖IC网 > PDF目录17116 > MAX17015AETP+T (Maxim Integrated Products)IC BATT CHARGER 1.2MHZ 20TQFN PDF资料下载
参数资料
| 型号： | MAX17015AETP+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 18/23页 |
| 文件大小： | 0K |
| 描述： | IC BATT CHARGER 1.2MHZ 20TQFN |
| 标准包装： | 2,500 |
| 功能： | 充电管理 |
| 电池化学： | 多化学 |
| 电源电压： | 8 V ~ 26 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-WFQFN 裸露焊盘 |
| 供应商设备封装： | 20-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
1.2MHz, Low-Cost,
High-Performance Chargers
If R ESR is small enough, its associated output zero has
a negligible effect near crossover and the loop-transfer-
Figure 8 shows the Bode plot of the voltage-loop-
frequency response using the values calculated above.
LTF = GM OUT ×
function can be simplified as follows:
R CC
sC OUT
G MV
MOSFET Drivers
The DHI and DLO outputs are optimized for driving
moderate-sized power MOSFETs. The MOSFET drive
capability is the same for both the low-side and high-
Setting LTF = 1 to solve for the unity-gain frequency
yields:
sides switches. This is consistent with the variable duty
factor that occurs in the notebook computer environ-
f CO _ CV = GM OUT × G MV ×
R CC
2 π × C OUT
ment where the battery voltage changes over a wide
range. There must be a low-resistance, low-inductance
path from the DLO driver to the MOSFET gate to pre-
For stability, choose a crossover frequency lower than
1/10 the switching frequency (f OSC) . For example,
choose a crossover frequency of 50kHz and solve for
R CC using the component values listed in Figure 1 to
yield R CC = 3k Ω :
vent shoot-through. Otherwise, the sense circuitry in the
MAX17005A/MAX17006A interpret the MOSFET gate as
“off” while there is still charge left on the gate. Use very
short, wide traces measuring 10 to 20 squares or fewer
(1.25mm to 2.5mm wide if the MOSFET is 25mm from
the device). Unlike the DLO output, the DHI output uses
R CC =
2 π × C OUT × f CO _ CV
GMV × GM OUT
? 3 k Ω
a 50ns (typ) delay time to prevent the low-side MOSFET
from turning on until DHI is fully off. The same consider-
ations should be used for routing the DHI signal to the
GMV = 0.125μA/mV
GM OUT = 5A/V
C OUT = 4.7μF
f OSC = 600kHz
R L = 0.2 Ω
f CO_CV = 50kHz
To ensure that the compensation zero adequately can-
cels the output pole, select f Z_CV ≤ f P_OUT :
C CC ≥ (R L /R CC ) x C OUT
C CC ≥ 300pF (assuming 2 cells and 2A maximum
charge current).
high-side MOSFET.
The high-side driver (DHI) swings from LX to 5V above
LX (BST) and has a typical impedance of 1.5 Ω sourcing
and 0.8 Ω sinking. The strong high-side MOSFET driver
eliminates most of the power dissipation due to switch-
ing losses. The low-side driver (DLO) swings from LDO
to ground and has a typical impedance of 3 Ω sinking
and 3 Ω sourcing. This helps prevent DLO from being
pulled up when the high-side switch turns on due to
capacitive coupling from the drain to the gate of the
low-side MOSFET. This places some restrictions on the
MOSFETs that can be used. Using a low-side
MOSFET with smaller gate-to-drain capacitance can
prevent these problems.
Design Procedure
80
60
40
20
0
0
-45
-90
MOSFET Selection
Choose the n-channel MOSFETs according to the maxi-
mum required charge current. The MOSFETs must be
able to dissipate the resistive losses plus the switching
losses at both V DCIN(MIN) and V DCIN(MAX) .
For the high-side MOSFET, the worst-case resistive
power losses occur at the maximum battery voltage
and minimum supply voltage:
-20
MAG
PHASE
PD COND ( HighSide ) =
V BATT ( MAX )
V DCIN ( MIN )
× I CHG 2 × R DS ( ON )
-40
-135
0.1
1
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
Figure 8. CC Loop Response
18
______________________________________________________________________________________
相关PDF资料 |
PDF描述 |
|---|---|
| SC43-470 | INDUCTOR SMD 47UH 0.54A 2.52MHZ |
| GMM11DRUS | CONN EDGECARD 22POS DIP .156 SLD |
| GCC18DRTN-S13 | CONN EDGECARD 36POS .100 EXTEND |
| 0210490818 | CABLE JUMPER 1.25MM .127M 13POS |
| GSC10DRXS-S734 | CONN EDGECARD 20POS DIP .100 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX17015BETP+ | 功能描述:电池管理 1.2MHz High-Perf Charger RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17015BETP+T | 功能描述:电池管理 1.2MHz High-Perf Charger RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17015ETP+ | 功能描述:电池管理 1.2MHz High-Perf Charger RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17015ETP+T | 功能描述:电池管理 1.2MHz High-Perf Charger RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17015ETP+TG51 | 功能描述:电池管理 RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。