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参数资料
| 型号： | MAX17024ETD+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 16/25页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR DIVIDER PWM 14TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 系列： | Quick-PWM™ |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 600kHz |
| 电源电压： | 2 V ~ 26 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 是 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 14-WFDFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
Single Quick-PWM Step-Down
Controller with Dynamic REFIN
There must be a low-resistance, low-inductance path
from the DL and DH drivers to the MOSFET gates for
the adaptive dead-time circuits to work properly; other-
wise, the sense circuitry in the MAX17024 interprets the
MOSFET gates as “off” while charge actually remains.
Use very short, wide traces (50 mils to 100 mils wide if
the MOSFET is 1in from the driver).
BST
DH
LX
(R BST )*
C BST
N H
INPUT (V IN )
L
The internal pulldown transistor that drives DL low is
robust, with a 0.9 ? (typ) on-resistance. This helps pre-
vent DL from being pulled up due to capacitive coupling
from the drain to the gate of the low-side MOSFETs
when the inductor node (LX) quickly switches from
ground to V IN . Applications with high-input voltages and
long inductive driver traces must ensure rising LX edges
do not pull up the low-side MOSFETs’ gate, causing
V DD
DL
C BYP
N L
V GS ( TH ) > V IN ? RSS ?
shoot-through currents. The capacitive coupling
between LX and DL created by the MOSFET’s gate-to-
drain capacitance (C RSS ), gate-to-source capacitance
(C ISS - C RSS ), and additional board parasitics should
not exceed the following minimum threshold:
? C ?
? C ISS ?
Typically, adding a 4700pF between DL and power
ground (C NL in Figure 5), close to the low-side
(C NL )*
PGND
(R BST )* OPTIONAL—THE RESISTOR LOWERS EMI BY DECREASING
THE SWITCHING NODE RISE TIME.
(C NL )* OPTIONAL—THE CAPACITOR REDUCES LX TO DL CAPACITIVE
COUPLING THAT CAN CAUSE SHOOT-THROUGH CURRENTS.
Figure 5. Gate Drive Circuit
MOSFETs, greatly reduces coupling. Do not exceed
22nF of total gate capacitance to prevent excessive
turn-off delays.
Alternatively, shoot-through currents can be caused by
a combination of fast high-side MOSFETs and slow low-
side MOSFETs. If the turn-off delay time of the low-side
MOSFET is too long, the high-side MOSFETs can turn
on before the low-side MOSFETs have actually turned
off. Adding a resistor less than 5 ? in series with BST
slows down the high-side MOSFET turn-on time, elimi-
nating the shoot-through currents without degrading
the turn-off time (R BST in Figure 5). Slowing down the
high-side MOSFET also reduces the LX node rise time,
thereby reducing EMI and high-frequency coupling
responsible for switching noise.
Quick-PWM Design Procedure
Firmly establish the input voltage range and maximum
load current before choosing a switching frequency and
inductor operating point (ripple-current ratio). The prima-
ry design trade-off lies in choosing a good switching fre-
quency and inductor operating point, and the following
four factors dictate the rest of the design:
?
?
adapter voltage. The minimum value (V IN(MIN) )
must account for the lowest input voltage after
drops due to connectors, fuses, and battery selec-
tor switches. If there is a choice at all, lower input
voltages result in better efficiency.
Maximum load current: There are two values to
consider. The peak load current (I LOAD(MAX) )
determines the instantaneous component stresses
and filtering requirements, and thus drives output
capacitor selection, inductor saturation rating, and
the design of the current-limit circuit. The continu-
ous load current (I LOAD ) determines the thermal
stresses and thus drives the selection of input
capacitors, MOSFETs, and other critical heat-con-
tributing components. Most notebook loads gener-
ally exhibit I LOAD = I LOAD(MAX) x 80%.
Switching frequency: This choice determines the
basic trade-off between size and efficiency. The
optimal frequency is largely a function of maximum
input voltage due to MOSFET switching losses that
are proportional to frequency and V IN 2 . The opti-
mum frequency is also a moving target, due to
?
Input voltage range: The maximum value
(V IN(MAX) ) must accommodate the worst-case input
supply voltage allowed by the notebook ’s AC
rapid improvements in MOSFET technology that are
making higher frequencies more practical.
16
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX17024EVKIT+ | 制造商:Maxim Integrated Products 功能描述:MAX17024 EVAL KIT - Boxed Product (Development Kits) |
| MAX17026 | 功能描述:直流/直流开关调节器 RoHS:否 制造商:International Rectifier 最大输入电压:21 V 开关频率:1.5 MHz 输出电压:0.5 V to 0.86 V 输出电流:4 A 输出端数量: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PQFN 4 x 5 |
| MAX17028GTJ+ | 功能描述:电压模式 PWM 控制器 Intel GMCH Single Phase PWM Controller RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| MAX17028GTJ+T | 功能描述:电压模式 PWM 控制器 Intel GMCH Single Phase PWM Controller RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| MAX1702BEGX | 功能描述:PMIC 解决方案 RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
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